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VS-80CNQ035ASMPBF

P1-P3P4-P6P7-P9
VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-14
1
Document Number: 94255
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, New Generation 3,
D-61 Package, 2 x 40 A
FEATURES
• 150 °C T
J
operation
• Center tap module
• Very low forward voltage drop
• High frequency operation
• High power discrete
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• New fully transfer-mould low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The center tap Schottky rectifier module series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package D-61
I
F(AV)
2 x 40 A
V
R
35 V, 40 V, 45 V
V
F
at I
F
0.51 V
I
RM
max. 250 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
54 mJ
Base
common
cathode
Base
common
cathode
Common
cathode
Anode
2
Anode
1
12
3
Common
cathode
Anode
2
Anode
1
12
3
Anode
2
Anode
1
1
3
D-61-8
VS-80CNQ...APbF
VS-80CNQ...ASMPbF
D-61-8-SM
VS-80CNQ...ASLPbF
D-61-8-SL
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 80 A
V
RRM
Range 35 to 45 V
I
FSM
t
p
= 5 μs sine 5800 A
V
F
40 A
pk
, T
J
= 125 °C (per leg) 0.47 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-80CNQ035APbF VS-80CNQ040APbF VS-80CNQ045APbF UNITS
Maximum DC reverse voltage V
R
35 40 45 V
Maximum working peak reverse voltage V
RWM
VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-14
2
Document Number: 94255
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 114 °C, rectangular waveform
40
A
per device 80
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
5800
10 ms sine or 6 ms rect. pulse 750
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 8 A, L = 1.7 mH 54 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
8A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
40 A
T
J
= 25 °C
0.52
V
80 A 0.66
40 A
T
J
= 125 °C
0.47
80 A 0.61
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
5
mA
T
J
= 125 °C 250
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.26 V
Forward slope resistance r
t
3.93 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 2600 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 5.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to case
per leg
R
thJC
DC operation (see fig. 4) 0.85
°C/W
per package DC operation 0.42
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased
Device flatness < 5 mils
0.30
Approximate weight
7.8 g
0.28 oz.
Mounting torque
minimum 40 (35)
kgf · cm
(lbf · in)
maximum 58 (50)
Marking device
Case style D-61
80CNQ035A
80CNQ040A
80CNQ045A
Case style D-61-8-SM
80CNQ035ASM
80CNQ040ASM
80CNQ045ASM
Case style D-61-8-SL
80CNQ035ASL
80CNQ040ASL
80CNQ045ASL
VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-14
3
Document Number: 94255
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
100
10
1000
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0
1.2
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520
40
45
25 30 35
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10 20 30
50
40
0
T
J
= 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P9

VS-80CNQ035ASMPBF

Mfr. #:
Buy VS-80CNQ035ASMPBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D-61TM-e3
Lifecycle:
New from this manufacturer.
Delivery:
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