STPSC1206D

September 2009 Doc ID 16288 Rev 1 1/7
7
STPSC1206
600 V power Schottky silicon carbide diode
Features
No reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC boost diode
Description
These diodes are manufactured using silicon
carbide substrate. This wide bandgap material
supports the manufacture of a Schottky diode
structure with a high voltage rating. Such diodes
exhibit no or negligible recovery characteristics.
The recovery characteristics are independent of
the temperature.
Using these diodes will significantly reduce the
switching power losses of the associated MOS-
FET, and thus increase the efficiency of the
overall application. These diodes will then
outperform the power factor correction circuit
operating in hard switching conditions.
Table 1. Device summary
I
F(AV)
12 A
V
RRM
600 V
T
j (max)
175 °C
Q
C (typ)
12 nC
K
A
TO-220AC
STPSC1206D
www.st.com
Characteristics STPSC1206
2/7 Doc ID 16288 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.2 x I
F(AV)
+ 0.075 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current T
c
= 110 °C, δ = 0.5 12
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal, T
c
= 25 °C
t
p
= 10 ms sinusoidal, T
c
= 125 °C
t
p
= 10 µs square, T
c
= 25 °C
50
40
200
A
I
FRM
Repetitive peak forward current T
c
= 105 °C, T
j
= 150 °C, δ = 0.1 50 A
T
stg
Storage temperature range -55 to +175 °C
T
j
Operating junction temperature -40 to +175 °C
Table 3. Thermal resistance
Symbol Parameter Maximum value Unit
R
th(j-c)
Junction to case 1.75 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 30 150
µA
T
j
= 150 °C - 200 1500
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 12 A
-1.41.7
V
T
j
= 150 °C - 1.6 2.1
1. t
p
= 10 ms, δ < 2%
2. t
p
= 500 µs, δ < 2%
Table 5. Other parameters
Symbol Parameter Test conditions Typ. Unit
Q
c
Total capacitive charge
V
r
= 400 V, I
F
= 12 A
dI
F
/dt = -200 A/µs, T
j
= 150 °C
12 nC
C Total capacitance
V
r
= 0 V, T
c
= 25 °C, F = 1 Mhz 750
pF
V
r
= 400 V, T
c
= 25 °C, F = 1 Mhz 65
STPSC1206 Characteristics
Doc ID 16288 Rev 1 3/7
Figure 1. Forward voltage drop versus
forward current (typical values)
Figure 2. Reverse leakage current versus
reverse voltage applied
(maximum values)
I
FM
(A)
0
2
4
6
8
10
12
14
16
18
20
22
24
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
j
=150 °CT
j
=150 °C
T
j
=175 °CT
j
=175 °C
T
j
=25 °CT
j
=25 °C
V
FM
(V)
I
R
(µA)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0 50 100 150 200 250 300 350 400 450 500 550 600
T
j
=25 °CT
j
=25 °C
T
j
=150 °CT
j
=150 °C
T
j
=175 °CT
j
=175 °C
V
R
(V)
Figure 3. Peak forward current versus case
temperature
Figure 4. Junction capacitance versus
reverse voltage applied
(typical values)
I
M
(A)
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150 175
T
δ
=tp/T
tp
δ=0.1
δ=0.3
δ=0.5
d=1δ=1
d=0.7δ=0.7
T
C
(°C)
C(pF)
0
100
200
300
400
500
600
1 10 100 1000
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
V
R
(V)

STPSC1206D

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 12A 600V 12nC Schottky Carbide
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet