74HC_HCT2G08 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 8 October 2013 6 of 15
NXP Semiconductors 74HC2G08; 74HCT2G08
Dual 2-input AND gate
[1] All typical values are measured at T
amb
= 25 C.
11. Dynamic characteristics
74HCT2G08
V
IH
HIGH-level input
voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V
V
IL
LOW-level input
voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - V
I
O
= 4.0 mA; V
CC
= 4.5 V 4.13 4.32 - 3.7 - V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.33 - 0.4 V
I
I
input leakage current V
I
=V
CC
or GND; V
CC
=5.5V - - 1.0 - 1.0 A
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--10 - 20A
I
CC
additional supply
current
per input; V
CC
= 4.5 V to 5.5 V;
V
I
=V
CC
2.1 V; I
O
=0A
- - 375 - 410 A
C
I
input capacitance - 1.5 - - - pF
Table 7. Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7
.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
74HC2G08
t
pd
propagation delay nA and nB to nY; see Figure 6
[2]
V
CC
= 2.0 V - 26 95 - 110 ns
V
CC
= 4.5 V - 9 19 - 22 ns
V
CC
= 5.0 V; C
L
= 15 pF - 9 - - - ns
V
CC
= 6.0 V - 8 16 - 20 ns
t
t
transition time see Figure 6
[3]
V
CC
= 2.0 V - 20 95 - 125 ns
V
CC
= 4.5 V - 7 19 - 25 ns
V
CC
= 6.0 V - 6 16 - 20 ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
[4]
-10- - -pF