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SSM3K345R,LF

P1-P3P4-P6P7-P9
SSM3K345R
1
MOSFETs Silicon N-Channel MOS
SSM3K345R
SSM3K345R
SSM3K345R
SSM3K345R
Start of commercial production
2016-11
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Power Management Switches
• DC-DC Converters
2.
2.
2.
2. Features
Features
Features
Features
(1) 1.5 V drive
(2) Low drain-source on-resistance
: R
DS(ON)
= 33 mΩ (max) (@V
GS
= 4.5 V)
R
DS(ON)
= 45 mΩ (max) (@V
GS
= 2.5 V)
R
DS(ON)
= 74 mΩ (max) (@V
GS
= 1.8 V)
R
DS(ON)
= 108 mΩ (max) (@V
GS
= 1.5 V)
3.
3.
3.
3. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
SOT-23F
1: Gate
2: Source
3: Drain
2016-12-09
Rev.1.0
©2016 Toshiba Corporation
SSM3K345R
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain current (pulsed)
Power dissipation
Power dissipation
Channel temperature
Storage temperature
t = 0.5 s
(Note 1)
(Note 1), (Note 2)
(Note 3)
(Note 3)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
P
D
T
ch
T
stg
Rating
20
±8
4
16
1
2
150
-55 to 150
Unit
V
A
W
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width ≤ 10 ms, Duty ≤ 1%
Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm
2
)
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, R
th(ch-a)
, and the drain power dissipation, P
D
, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2016-12-09
Rev.1.0
©2016 Toshiba Corporation
SSM3K345R
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source breakdown voltage
Drain-source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Drain-source on-resistance
(Note 1)
(Note 2)
(Note 3)
Symbol
V
(BR)DSS
V
(BR)DSX
I
DSS
I
GSS
V
th
R
DS(ON)
Test Condition
I
D
= 1 mA, V
GS
= 0 V
I
D
= 1 mA, V
GS
= -5 V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 0 V, V
GS
= ±6 V
V
DS
= 3 V, I
D
= 1 mA
I
D
= 0.5 A, V
GS
= 1.5 V
I
D
= 0.5 A, V
GS
= 1.8 V
I
D
= 1.0 A, V
GS
= 2.5 V
I
D
= 4.0 A, V
GS
= 4.5 V
Min
20
15
0.40
Typ.
54
40
31
25
Max
1
±1
1.00
108
74
45
33
Unit
V
µA
V
mΩ
Note 1: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (1 mA for
this device). Then, for normal switching operation, V
GS(ON)
must be higher than V
th
, and V
GS(OFF)
must be
lower than V
th
. This relationship can be expressed as: V
GS(OFF)
< V
th
< V
GS(ON)
.
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
on
t
off
Test Condition
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= 10 V, I
D
= 0.5 A,
V
GS
= 0 to 4.5 V, R
G
= 10 Ω
Min
Typ.
410
40
85
25
45
Max
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
= 8 V, I
D
= 4 A,
V
GS
= 4.5 V
Min
Typ.
3.6
0.62
0.79
Max
Unit
nC
2016-12-09
Rev.1.0
©2016 Toshiba Corporation
P1-P3P4-P6P7-P9

SSM3K345R,LF

Mfr. #:
Buy SSM3K345R,LF
Manufacturer:
Toshiba
Description:
MOSFET LowON Res MOSFET ID=4A VDSS=20V
Lifecycle:
New from this manufacturer.
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