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IRF7410TRPBF

P1-P3P4-P6P7-P9
Parameter Max. Units
V
DS
Drain- Source Voltage -12 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -16
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -13 A
I
DM
Pulsed Drain Current -65
P
D
@T
A
= 25°C Power Dissipation 2.5
P
D
@T
A
= 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
V
GS
Gate-to-Source Voltage ±8 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to +150 °C
11/17/08
www.irf.com 1
IRF7410PbF
HEXFET
®
Power MOSFET
These P-Channel HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
SO-8
V
DSS
R
DS(on)
max I
D
-12V 7mΩ@V
GS
= -4.5V -16A
9mΩ@V
GS
= -2.5V -13.6A
13mΩ@V
GS
= -1.8V -11.5A
PD - 96028B
IRF7410PbF
2 www.irf.com
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Surface mounted on 1 in square Cu board, t ≤ 10sec.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage -12 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.006 ––– V/°C
––– ––– 7
––– ––– 9
––– ––– 13
V
GS(th)
Gate Threshold Voltage -0.4 ––– -0.9 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -3.09 ––– mV/°C
gfs Forward Transconductance 55 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– -1.0
––– ––– -25
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
Q
g
Total Gate Charge ––– 91
Q
gs
Gate-to-Source Charge ––– 18 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 25
t
d(on)
Turn-On Delay Time ––– 13 20
t
r
Rise Time ––– 12 18
t
d(off)
Turn-Off Delay Time ––– 271 407
t
f
Fall Time ––– 200 300
C
iss
Input Capacitance ––– 8676 –––
C
oss
Output Capacitance ––– 2344 –––
C
rss
Reverse Transfer Capacitance ––– 1604 –––
Source-Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 97 145
ns
T
J
= 25°C I
F
= -2.5A
Q
rr
Reverse Recovery Charge ––– 134 201
µ
C di/dt = -100A/
µ
s
R
DS(on)
Static Drain-to-Source On-Resistance
––– –––
––– –––
-2.5
-65
ns
pF
A
V
GS
= -2.5V, I
D
= -13.6A
V
GS
= -1.8V, I
D
= -11.5A
V
DS
= V
GS
, I
D
= -250µA
mΩ
µA
nA
nC
V
DS
= -10V, I
D
= -16A
I
D
= -16A
V
GS
= -8V
V
GS
= 8V
MOSFET symbol
showing the
V
DS
=-9.6V
Conditions
R
G
= 6Ω
V
GS
= 0V
V
DS
= -10V
ƒ = 1.0 MHz
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -16A
V
DS
= -9.6V, V
GS
= 0V
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70°C
I
D
=-1.0A
R
D
= 6Ω
V
GS
= -4.5V
V
DD
= -6V V
GS
= -4.5V
IRF7410PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-16A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-1.0V
≤
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
GS
, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= -10V
≤
60µs PULSE WIDTH
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
-1.0V
≤
60µs PULSE WIDTH
Tj = 25°C
P1-P3P4-P6P7-P9

IRF7410TRPBF

Mfr. #:
Buy IRF7410TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT PCh -12V -16A 7mOhm 91nC
Lifecycle:
New from this manufacturer.
Delivery:
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