KSC5302DTU Datasheet KSC5302DTU | P1-P3

KSC5302D

NPN Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Thermal Characteristics

T

C

=25°C unless otherwise noted

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 800 V

V

CEO

Collector-Emitter Voltage 400 V

V

EBO

Emitter-Base Voltage 12 V

I

C

Collector Current (DC) 2 A

I

CP

*Collector Current (Pulse) 5 A

I

B

Base Current (DC) 1 A

I

BP

*Base Current (Pulse) 2 A

P

C

Power Dissipation(T

C

=25°C) 50 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Characteristics Rating Unit

R

θjc

Thermal Resistance Junction to Case 2.5 °C/W

R

θja

Junction to Ambient 62.5

KSC5302D

High Voltage High Speed Power Switch

Application

• High Breakdown Voltage : BV

CBO

=800V

• Built-in Free-wheeling Diode makes efficient anti saturation operation

• Suitable for half bridge light ballast Applications

• No need to interest an h

FE

value because of low variable storage-time

spread

• Even though corner spirit product

• Low base drive requirement

1.Base 2.Collector 3.Emitter

1

TO-220

C

B

E

Equivalent Circuit

KSC5302D

Electrical Characteristics T

C

=25°C unless otherwise noted

*Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10%

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=1mA, I

E

=0 800 - - V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=5mA, I

B

=0 400 - - V

BV

EBO

Emitter Cut-off Current I

E

=1mA, I

C

=0 12 - - V

I

CBO

Collector Cut-off Current V

CB

=500V, I

E

=0 - - 10 µA

I

EBO

Emitter Cut-off Current V

EB

= 9V, I

C

= 0 - - 10 µA

h

FE1

h

FE2

DC Current Gain V

CE

=1V, I

C

=0.4A

V

CE

=1V, I

C

=1A

20

10

-

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=0.4A, I

B

=0.04A

I

C

=1A, I

B

=0.2A

-

0.4

0.5

V

BE

(sat) Base-Emitter Saturation Voltage I

C

=0.4A, I

B

=0.04A

I

C

=1A, I

B

=0.2A

-

0.9

1.0

V

C

ob

Output Capacitance V

CB

= 10V, f=1MHz - - 75 pF

t

ON

Turn ON time V

CC

=300V, I

C

=1A

I

B1

= 0.2A, I

B2

=-0.5A,

R

L

= 300Ω

- - 150 ns

t

STG

Storage Time - - 2 µs

t

F

Fall Time - - 0.2 µs

t

STG

Storage Time V

CC

=15V, V

Z

=300V

I

C

= 0.8A, I

B1

= 0.16A

I

B2

= -0.16A , L

= 200µH

- - 2.35 µs

t

F

Fall Time - - 150 ns

V

F

Diode Forward Voltage I

F

= 0.4A

I

F

= 1A

-

1.2

1.5

V

t

rr

*Reverse Recovery Time

(di/dt = 10A/µs)

I

F

= 0.2A

I

F

= 0.4A

I

F

= 1A

-

800

1

1.4

-

ns

µs

KSC5302D

Rev. A1, June 2001

Typcial Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Figure 5. Collector-Base Saturation Voltage Figure 6. Base-Emitter Saturation Voltage

012345678910

0

1

2

3

4

5

I

B

= 450mA

I

B

= 500mA

I

B

= 250mA

I

B

= 150mA

I

B

= 300mA

I

B

= 350mA

I

B

= 400mA

I

B

= 200mA

I

B

= 100mA

I

B

= 50mA

I

B

= 0

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1 10

1

10

100

-25

o

C

25

o

C

T

a

= 125

o

C

V

CE

= 5V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

1

10

100

-20

o

C

25

o

C

T

a

= 125

o

C

V

CE

= 1V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

-20

o

C

25

o

C

T

a

= 125

o

C

I

C

= 5I

B

V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.1

1

10

-20

o

C

25

o

C

T

a

= 125

o

C

I

C

= 5I

B

V

BE

[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

KSC5302DTU

KSC5302DTU

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