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MMST5551-7-F

P1-P3P4-P5
MMST5551
Document number: DS30173 Rev. 9 - 2
1 of 4
www.diodes.com
May 2014
© Diodes Incorporated
MMST5551
180V NPN SMALL SIGNAL TRANSISTOR IN SOT323
Features
• Epitaxial Planar Die Construction
• Ultra-Small Surface Mount Package
• Complementary NPN Type: MMST5401
• Ideal for Low Power Amplification and Switching
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SOT323
• Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
Ordering Information (Notes 4 & 5)
Device
Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per reel
MMST5551-7-F
AEC-Q101 K4N 7 8 3,000
MMST5551Q-7-F
Automotive K4N 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Device Symbol
Top View
Pin-Out
SOT323
C
E
B
xxx
YM
K4N
K4N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
MMST5551
Document number: DS30173 Rev. 9 - 2
2 of 4
www.diodes.com
May 2014
© Diodes Incorporated
MMST5551
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Collector-Base Voltage
V
CBO
180 V
Collector-Emitter Voltage
V
CEO
160 V
Emitter-Base Voltage
V
EBO
6.0 V
Continuous Collector Current
I
C
200 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Power Dissipation (Note 6)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
625
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
ESD Ratings (Note 7)
Characteristic Symbol
V
alue Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
V
CBO
180 — V
I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
CEO
160 — V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
EBO
6.0 — V
I
E
= 10µA, I
C
= 0
Collector Cutoff Current
I
CBO
— 50
nA
µA
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= +100°C
Emitter Cutoff Current
I
EBO
— 50 nA
V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 8)
DC Current Gain
h
FE
80
80
30
—
250
—
—
I
C
= 1.0mA , V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
—
0.15
0.20
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
— 1.0 V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
— 6.0 pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
50 250 —
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
100 300 MHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
Noise Figure NF — 8.0 dB
V
CE
= 5.0V, I
C
= 200µA,
R
S
=1.0Ω, f = 1.0kHz
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMST5551
Document number: DS30173 Rev. 9 - 2
3 of 4
www.diodes.com
May 2014
© Diodes Incorporated
MMST5551
Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
0
50
25 50
75 100 125
150
175
200
P
,
P
O
W
E
R
DI
S
S
I
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
A
100
150
200
0
Note 1
0.04
0.05
0.06
0.07
0.08
0.09
0.15
0.14
0.13
0.12
0.11
0.10
1
10 100
1,000
V,
C
O
LLE
C
T
O
R
T
O
E
M
I
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
C
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1,000
100
1
10
100
h, D
C
C
U
R
R
E
N
T
G
A
IN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs.
Collector Current
C
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1 10
100
V, B
A
S
E
E
M
I
T
T
E
R
VOL
T
A
G
E
(V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current
C
1
10
1,000
100
1
10 100
f,
G
A
IN B
A
NDWIDTH
P
R
O
DU
C
T (
M
Hz)
T
I , COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current
C
P1-P3P4-P5

MMST5551-7-F

Mfr. #:
Buy MMST5551-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN BIPOLAR
Lifecycle:
New from this manufacturer.
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