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NSR0520V2T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 4
1 Publication Order Number:
NSR0520V2T1/D
NSR0520V2, NSVR0520V2
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0520V2 in a SOD−523 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
• Very Low Forward Voltage Drop − 325 mV @ 100 mA
• Low Reverse Current − 8.0 mA @ 10 V
• Continuous Forward Current − 500 mA
• Power Dissipation with Minimum Trace − 170 mW
• Very High Switching Speed − 12 ns @ 10 mA
• Low Capacitance − 35 pF @ 1.0 V
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping and Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
20 Vdc
Forward Continuous Current (DC) I
F
500 mA
Non−Repetitive Peak Forward Surge Current I
FSM
2.0 A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
1.5 A
ESD Rating: Human Body Model
Machine Model
ESD Class 3B
Class C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
20 VOLT SCHOTTKY
BARRIER DIODE
Device Package Shipping
†
ORDERING INFORMATION
1
CATHODE
2
ANODE
NSR0520V2T1G SOD−523
(Pb−Free)
3000/Tape & Ree
l
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOD−523
CASE 502
STYLE 1
MARKING DIAGRAM
1
2
12
AA = Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation position may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
AA MG
G
NSVR0520V2T1G SOD−523
(Pb−Free)
3000/Tape & Ree
l
NSR0520V2T5G SOD−523
(Pb−Free)
8000/Tape & Ree
l
NSR0520V2, NSVR0520V2
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
600
170
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
300
340
°C/W
mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +125 °C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 20 V)
I
R
8.0
75
30
mA
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 500 mA)
V
F
255
325
410
320
390
480
mV
Total Capacitance
(V
R
= 1.0 V, f = 1 MHz)
CT
35 pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R
= 1.0 mA)
t
rr
12.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. DC Current Source is adjusted for a Forward Current (I
F
) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
RM
of 10 mA.
3. Pulse Generator transition time << t
rr
.
4. I
R(REC)
is measured at 1 mA. Typically 0.1 X I
RM
or 0.25 X I
RM
.
5. t
p
» t
rr
R
L
= 50 W
Current
Transformer
DUT
750 mH
0.1 mF
50 W Output
Pulse
Generator
t
r
t
p
10%
90%
I
F
I
RM
t
rr
i
R(REC)
= 1 mA
Output Pulse
(I
F
= I
RM
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
Pulse Generator
Output
Figure 1. Recovery Time Equivalent Test Circuit
50 W Input
Oscilloscope
0.1 mF
0 V
V
R
DC Current
Source
Adjust for I
RM
+−
NSR0520V2, NSVR0520V2
http://onsemi.com
3
TYPICAL CHARACTERISTICS
0.1
1
10
100
1000
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
−40°C
85°C
25°C
125°C
I
F
, FORWARD CURRENT (mA)
V
F
, FORWARD VOLTAGE (V)
Figure 2.
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
100000
0 2 4 6 8 10 12 14 16 18
20
−40°C
25°C
85°C
125°C
V
R
, REVERSE VOLTAGE (V)
Figure 3.
I
R
, REVERSE CURRENT (mA)
10
15
20
25
30
35
40
45
50
55
60
0 2 4 6 8 101214161820
V
R
, REVERSE VOLTAGE (V)
Figure 4.
C
t
, TOTAL CAPACITANCE (pF)
P1-P3P4-P4

NSR0520V2T5G

Mfr. #:
Buy NSR0520V2T5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 20V SOD-523 SCHOTTK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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