©2002 Fairchild Semiconductor Corporation Rev. A, October 2002
BC212B
Absolute Maximum Ratings* T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 50 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current - Continuous 100 mA
T
J,
T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 2mA 50 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= 10µA60V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 10µA5V
I
CBO
Collector Cut-off Current V
CB
= 30V 15 nA
I
EBO
Emitter Cut-off Current V
EB
= 4V 15 nA
On Characteristics*
h
FE
DC Current Gain V
CE
= 5V, I
C
= 10µA
V
CE
= 5V, I
C
= 2mA
40
60
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 100mA, I
B
= 5mA 0.6 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 100mA, I
B
= 5mA 1.4 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 5V, I
C
= 2mA 0.6 0.72 V
Small Signal Characteristics
C
ob
Output Capacitance V
CE
= 10V, f = 1MHz 6 pF
h
fe
Small Signal Current Gain V
CE
= 5V, I
C
= 2mA, f = 1KHz 200 400
NF Noise Figure V
CE
= 5V, I
C
= 200µA, f = 1KHz
R
G
= 2KΩ, BW = 200Hz
10 dB
BC212B
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 68.
1. Collector 2. Base 3. Emitter
TO-92
1
