NGTB15N120LWG

NGTB15N120LWG
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4
TYPICAL CHARACTERISTICS
Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature
Q
G
, GATE CHARGE (nC) TEMPERATURE (°C)
1751501251007550250
0
2
4
6
8
12
14
16
Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. I
C
TEMPERATURE (°C) I
C
, COLLECTOR (A)
140120100806040200
1
10
100
1000
282622201814108
6
Figure 11. Switching Time vs. I
C
Figure 12. Energy Loss vs. Rg
I
C
, COLLECTOR (A)
Rg, GATE RESISTOR (W)
302622181614108
1
10
100
1000
756555453525155
6
V
GE
, GATEEMITTER VOLTAGE (V)
E
off
, TURNOFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
E
off
, TURNOFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
E
off
, TURNOFF SWITCHING LOSS (mJ)
200
10
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
Rg = 15 W
200 V
400 V
600 V
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
Rg = 15 W
t
f
t
d(off)
12 16 24 30 32
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 15 W
12 20 24 28 32
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 15 W
t
f
t
d(off)
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
T
J
= 150°C
85
3.5
3
2.5
2
1.5
1
0.5
0
0 20 40 60 80 100 120 140 160
E
on
E
off
t
d(on)
t
r
5
4
3
2
1
0
E
on
E
off
t
d(on)
t
r
5
4
3
2
1
0
NGTB15N120LWG
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5
TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. V
CE
Rg, GATE RESISTOR (W)
V
CE
, COLLECTOREMITTER VOLTAGE (V)
756555453525155
1
10
100
1000
725675625575525475425375
5
Figure 15. Switching Time vs. V
CE
Figure 16. Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (V) V
CE
, COLLECTOREMITTER VOLTAGE (V)
725675625575525475425375
1
10
100
1000
Figure 17. Reverse Bias Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (V)
SWITCHING TIME (ns)
E
off
, TURNOFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
85
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
T
J
= 150°C
775
V
GE
= 15 V
I
C
= 15 A
Rg = 15 W
T
J
= 150°C
775
V
GE
= 15 V
I
C
= 15 A
Rg = 15 W
T
J
= 150°C
t
f
t
d(off)
t
d(on)
t
r
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
t
f
t
d(off)
t
d(on)
t
r
100100101
0.01
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
1000100101
0.01
10
100
1000
V
GE
= 15 V, T
C
= 125°C
1
0.1
NGTB15N120LWG
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6
TYPICAL CHARACTERISTICS
Figure 18. IGBT Transient Thermal Impedance
PULSE TIME (sec)
THERMAL RESPONSE (Z
q
JC
)
Figure 19. Diode Transient Thermal Impedance
PULSE TIME (sec)
1000100100.10.010.0010.00010.000001
0.001
0.1
1
10
THERMAL RESPONSE (Z
q
JC
)
10.00001
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
R
q
JC
= 1.5
0.01
Junction
C
1
C
2
R
1
R
2
C
i
= t
i
/R
i
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
R
i
(°C/W)
t
i
(sec)
1.48E4
0.002
0.03
0.19655
0.414
0.5
Case
C
n
R
n
0.1
2.0
0.345
0.0934
Junction
Case
C
1
C
2
R
1
R
2
R
n
C
i
= t
i
/R
i
C
n
t
i
(sec)
0.002935
0.031623
0.100000
0.003479
0.009274
R
i
(°C/W)
0.003407
0.001000
0.001000
0.090901
0.107824
0.1456270.021715
0.0764470.130809
0.1979390.159760
3.4480380.029002
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
R
q
JC
= 0.545
1
0
0.10.010.0010.0001
0.6
10.00001
0.5
0.4
0.3
0.2
0.1
0
50% Duty Cycle
Single Pulse
2%
5%
10%
20%
Figure 20. Test Circuit for Switching Characteristics

NGTB15N120LWG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/15A IGBT LPT TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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