IXFV30N60P Datasheet IXFH30N60P, IXFT30N60P, IXFV30N60PS | P1-P3

DS99316E(03/06)

PolarHV

TM

HiPerFET

Power MOSFET

V

DSS

= 600 V

I

D25

=30 A

R

DS(on)

≤≤

≤ 240 m

ΩΩ

Ω

t

rr

≤≤

≤ 200 ns

N-Channel Enhancement Mode

Fast Recovery Diode

Avalanche Rated

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 µA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 2.5 5.0 V

I

GSS

V

GS

= ±30 V, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

240 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 600 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 600 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25° C30A

I

DM

T

C

= 25° C, pulse width limited by T

JM

80 A

I

AR

T

C

= 25° C30A

E

AR

T

C

= 25° C50mJ

E

AS

T

C

= 25° C 1.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 20 V/ns

T

J

≤ 150° C, R

G

= 4 Ω

P

D

T

C

= 25° C 500 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 ° C

M

d

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS220) 11..65/2.5..15 N/lb.

Weight TO-247 6 g

TO-268 5 g

PLUS220 4 g

IXFH 30N60P

IXFT 30N60P

IXFV 30N60P

IXFV 30N60PS

Features

l

Fast Recovery diode

l

Unclamped Inductive Switching (UIS)

rated

l

International standard packages

l

Low package inductance

- easy to drive and to protect

G

S

D

PLUS220 (IXFV)

D (TAB)

G = Gate D = Drain

S = Source TAB = Drain

G

D

S

TO-247 (IXFH)

D (TAB)

PLUS220 SMD (IXFV...S)

G

S

D (TAB)

TO-268 (IXFT)

G

S

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 30N60P IXFT 30N60P

IXFV 30N60P IXFV 30N60PS

Symbol Test Conditions Characteristic Values

(T

J

= 25° C unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, pulse test 15 27 S

C

iss

4000 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 430 pF

C

rss

42 pF

t

d(on)

29 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 I

D25

20 ns

t

d(off)

R

G

= 4 Ω (External) 80 ns

t

f

25 ns

Q

g(on)

82 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

28 nC

Q

gd

28 nC

R

thJC

0.25 ° C/W

R

thCS

TO-247, PLUS220 0.21 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 30 A

I

SM

Repetitive 80 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 25A, -di/dt = 100 A/µs 200 ns

Q

RM

V

R

= 100V, V

GS

= 0 V 0.8 µC

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXFH 30N60P IXFT 30N60P

IXFV 30N60P IXFV 30N60PS

Fig. 2. Extended Output Characte ristics

@ 25

º

C

0

5

10

15

20

25

30

35

40

45

50

55

60

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6.5V

6V

5.5V

Fig. 3. Output Characteristics

@ 125

º

C

0

3

6

9

12

15

18

21

24

27

30

024681012141618

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5.5V

5V

4.5V

6V

Fig. 1. Output Characteristics

@ 25

º

C

0

3

6

9

12

15

18

21

24

27

30

012345678

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5.5V

5V

6.5V

6V

Fig. 4. R

DS(on

)

Norm alized to I

D

= 15A

Value vs . Junction Tem perature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 30A

I

D

= 15A

V

GS

= 10V

Fig. 6. Drain Current vs . Case

Tem perature

0

5

10

15

20

25

30

35

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Norm alized to

I

D

= 15A Value vs. Drain Curre nt

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 5 10 15 20 25 30 35 40 45 50 55 60

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125

º

C

T

J

= 25

º

C

V

GS

= 10V

IXFV30N60P

IXFV30N60P

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