JFET VHF/UHF Amplifiers
N–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DS
±30 Vdc
Drain–Gate Voltage V
DG
30 Vdc
Gate–Source Voltage V
GS
30 Vdc
Drain Current I
D
100 mAdc
Forward Gate Current I
G(f)
10 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Storage Channel Temperature Range T
stg
–65 to +150 °C
3 DRAIN
1 SOURCE
2
GATE
3 DRAIN
2 SOURCE
1
GATE
STYLE 22 STYLE 23
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(I
G
= 1.0 µAdc, V
DS
= 0)
V
(BR)GSS
30 Vdc
Gate–Source
(V
DS
= 15 Vdc, I
D
= 200 µAdc) BF245
(1)
BF245A, BF244A
(2)
BF245B, BF244B
BF245C
V
GS
0.4
0.4
1.6
3.2
7.5
2.2
3.8
7.5
Vdc
Gate–Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
V
GS(off)
0.5 8.0 Vdc
Gate Reverse Current
(V
GS
= 20 Vdc, V
DS
= 0)
I
GSS
5.0 nAdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(V
DS
= 15 Vdc, V
GS
= 0) BF245
(1)
BF245A, BF244A
(2)
BF245B, BF244B
BF245C
I
DSS
2.0
2.0
6.0
12
25
6.5
15
25
mAdc
1. On orders against the BF245, any or all subgroups might be shipped.
2. On orders against the BF244A, any or all subgroups might be shipped.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1 Publication Order Number:
BF245A/D
BF245A
BF245B
BF244A, BF244B
CASE 29–11, STYLE 22
TO–92 (TO–226AA)
1
2
3
BF245, BF245A,
BF245B, BF245C
CASE 29–11, STYLE 23
TO–92 (TO–226AA)
1
2
3
BF245A BF245B
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz) Y
fs
3.0 6.5 mmhos
Output Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz) Y
os
40 mhos
Forward Transfer Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 200 MHz) Y
fs
5.6 mmhos
Reverse Transfer Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 200 MHz) Y
rs
1.0 mmhos
Input Capacitance (V
DS
= 20 Vdc, –V
GS
= 1.0 Vdc) C
iss
3.0 pF
Reverse Transfer Capacitance (V
DS
= 20 Vdc, –V
GS
= 1.0 Vdc, f = 1.0 MHz) C
rss
0.7 pF
Output Capacitance (V
DS
= 20 Vdc, –V
GS
= 1.0 Vdc, f = 1.0 MHz) C
oss
0.9 pF
Cut–off Frequency
(3)
(V
DS
= 15 Vdc, V
GS
= 0) F
(Yfs)
700 MHz
3. The frequency at which g
fs
is 0.7 of its value at 1 kHz.
f, FREQUENCY (MHz)
30
10
b
is
@ I
DSS
f, FREQUENCY (MHz)
5.0
Figure 1. Input Admittance (y
is
) Figure 2. Reverse Transfer Admittance (y
rs
)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25°C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 3. Forward Transadmittance (y
fs
) Figure 4. Output Admittance (y
os
)
g
is
, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300
500 700
1000
b
is
, INPUT SUSCEPTANCE (mmhos)
g
fs
, FORWARD TRANSCONDUCTANCE (mmhos)
|b
fs
|, FORWARD SUSCEPTANCE (mmhos)
g
rs
, REVERSE TRANSADMITTANCE (mmhos)
b
rs
, REVERSE SUSCEPTANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g
os
, OUTPUT ADMITTANCE (mhos)
b
os
, OUTPUT SUSCEPTANCE (mhos)
3.0
0.05
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
10 20 30 50 70 100 200 300
500 700
1000
10 20 30 50 70 100 200 300
500 700
1000
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10 20 30 50 70 100 200 300
500 700
1000
b
is
@ 0.25 I
DSS
g
is
@ I
DSS
g
is
@ 0.25 I
DSS
b
rs
@ I
DSS
0.25 I
DSS
g
rs
@ I
DSS
, 0.25 I
DSS
g
fs
@ I
DSS
|b
fs
| @ I
DSS
|b
fs
| @ 0.25 I
DSS
b
os
@ I
DSS
and 0.25 I
DSS
g
os
@ I
DSS
g
os
@ 0.25 I
DSS
g
fs
@ 0.25 I
DSS
BF245A BF245B
http://onsemi.com
3
Figure 5. S
11s
Figure 6. S
12s
0° 350° 340° 330°10°20°30°
180° 190° 200° 210°170°160°150°
3
2
31
3
0
2
9
2
8
2
7
2
6
2
5
2
4
2
3
2
2
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0° 350° 340° 330°10°20°30°
180° 190° 200° 210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0° 350° 340° 330°10°20°30°
180° 190° 200° 210°170°160°150°
3
2
31
3
0
2
9
2
8
2
7
2
6
2
5
2
4
2
3
2
2
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0° 350° 340° 330°10°20°30°
180° 190° 200° 210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900
900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
600
700
800
900
500
I
D
= I
DSS
, 0.25 I
DSS
900
500
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
900
100
500
700
300
400
500
600
700
800
Figure 7. S
21s
Figure 8. S
22s
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25°C, Data Points in MHz)

BF245A

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
JFET N-CH 30V 100MA TO92
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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