VS-GB100TP120N
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
1
Document Number: 94821
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 100 A
FEATURES
• High short circuit capability, self limiting to 6 x I
C
• 10 μs short circuit capability
•V
CE(on)
with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• AC inverter drives
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C 100 A
V
CE(on)
(typical)
at I
C
= 100 A, 25 °C
1.80 V
Speed 8 kHz to 30 kHz
Package INT-A-PAK
Circuit Half bridge
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200
V
Gate to emitter voltage V
GES
± 20
Collector current I
C
T
C
= 25 °C 200
A
T
C
= 80 °C 100
Pulsed collector current I
CM
(1)
t
p
= 1 ms 200
Diode continuous forward current I
F
100
Diode maximum forward current I
FM
200
Maximum power dissipation P
D
T
J
= 150 °C 650 W
Short circuit withstand time t
SC
T
J
= 125 °C 10 μs
RMS isolation voltage V
ISOL
f = 50 Hz, t = 1 min 2500 V
I
2
t-value, diode I
2
tV
R
= 0 V, t = 10 ms, T
J
= 125 °C 1050 A
2
s
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 1.0 mA, T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C - 1.80 2.20
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 2.05 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 4.0 mA, T
J
= 25 °C 5.0 6.2 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
