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ESD7331MUT5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
October, 2017 − Rev. 1
1 Publication Order Number:
ESD7331/D
ESD7331
ESD Protection Diode
Micro−Packaged Diodes for ESD Protection
The ESD7331 is designed to protect voltage sensitive components
that require low capacitance from ESD and transient voltage events.
Excellent clamping capability, low capacitance, low leakage, and fast
response time, make these parts ideal for ESD protection on designs
where board space is at a premium. Because of its low capacitance, the
part is well suited for use in high frequency designs such as USB 2.0
high speed applications.
Features
• Low Capacitance 0.4 pF (Typ)
• Low Clamping Voltage
• Small Body Outline Dimensions: 0.60 mm x 0.30 mm
• Low Body Height: 0.3 mm
• Stand−off Voltage: 3.3 V
• IEC61000−4−2 Level 4 ESD Protection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• USB 2.0/3.0
• MHL 2.0
• eSATA
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact
Air
±15
±15
kV
Total Power Dissipation on FR−5 Board
(Note 1) @ T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
°P
D
°
R
q
JA
250
400
mW
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
Device Package Shipping
†
ORDERING INFORMATION
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ESD7331MUT5G X3DFN2
(Pb−Free)
15000 / Tape &
Reel
X3DFN2
CASE 152AF
MARKING
DIAGRAM
PIN 1
6 = Specific Device Code
(Rotated 180°)
M = Date Code
1
Cathode
2
Anode
6
M
Bi−Directional
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
ESD7331
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
3.3 V
Breakdown Voltage (Note 2) V
BR
I
T
= 1 mA 4.0 V
Reverse Leakage Current I
R
V
RWM
= 3.3 V 1.0
mA
Clamping Voltage (Note 3) V
C
I
PP
= 1 A 7.5 V
ESD Clamping Voltage V
C
Per IEC61000−4−2 See Figures 1 and 2
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz 0.4 0.75 pF
Dynamic Resistance R
DYN
TLP Pulse 0.26
W
Insertion Loss f = 100 MHz
f = 8.5 GHz
0.003
1.79
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Non−repetitive current pulse at T
A
= 25°C, per IEC61000−4−5 waveform.
Figure 1. ESD Clamping Voltage Positive 8 kV
Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Negative 8 kV
Contact per IEC61000−4−2
VOLTAGE (V)
TIME (ns)
−20
0
20
40
60
80
100
120
140
160
−20 0 20 40 60 80 100 120 140
VOLTAGE (V)
TIME (ns)
−70
−60
−50
−40
−30
−20
−10
0
10
−20 0 20 40 60 80 100 120 140
ESD7331
www.onsemi.com
3
Figure 3. Reverse Leakage Current Figure 4. Line Capacitance, f = 1 MHz
I
R
(A)
V
R
(V)
C (pF)
VBias (V)
1.E−11
1.E−10
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−12
−10 −6 −4 −20 2 4
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
−2.5 −2 −1.5 −1 −0.5 0 0.5 1 1.5
Figure 5. RF Insertion Loss Figure 6. Capacitance over Frequency
CAPACITANCE (pF)
FREQUENCY (Hz)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.E+00 2.E+09 4.E+09 6.E+09 8.E+09 1.E+10
6 10 2 2.5
S21 (dB)
FREQUENCY (Hz)
−10
−9
−8
−7
−6
−5
−4
−3
−2
−1
1.E+07 1.E+08 1.E+09 1.E+10
0
1
Figure 7. Positive TLP I−V Curve
I
TLP
(A)
V
CTLP
(V)
0
2
4
6
8
10
12
14
16
18
22
048121620
Figure 8. Negative TLP I−V Curve
−88
0.7
0.8
0.9
1.0
2 6 10 14 18
20
I
TLP
(A)
V
CTLP
(V)
0
−2
−4
−6
−8
−10
−12
−14
−16
−18
−22
0 −4 −8 −12 −16 −20−2 −6 −10 −14 −18
−20
P1-P3P4-P5

ESD7331MUT5G

Mfr. #:
Buy ESD7331MUT5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 3.3V ESD PROTECTION IN X3
Lifecycle:
New from this manufacturer.
Delivery:
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