V3FM10
www.vishay.com
Vishay General Semiconductor
Revision: 24-Jan-18
1
Document Number: 87566
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifiers
FEATURES
• Trench MOS Schottky technology
• Low profile package
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Wave and reflow solderable
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
MECHANICAL DATA
Case: SMF (DO-219AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
Notes
(1)
Free air, mounted on FR4 PCB, 2 oz. standard footprint
(2)
Mounted on FR4 PCB, 2 oz. 10 mm x 10 mm copper pad areas
(3)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
100 V
I
FSM
55 A
V
F
at I
F
= 3 A (T
A
= 125 °C) 0.62 V
T
J
max. 175 °C
Package SMF (DO-219AB)
Diode variations Single
Top view Bottom view
SMF (DO-219AB)
TMBS
®
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V3FM10 UNIT
Device marking code 3MB
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig.1)
I
F(AV)
(1)
2.5
A
I
F(AV)
(2)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
55 A
Operating junction temperature range T
J
(3)
-40 to +175
°C
Storage temperature range T
STG
-55 to +175