IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V, 9 13 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
1450 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 130 pF
C
res
37 pF
Q
g
41 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
18 nC
Q
gc
18 nC
t
d(on)
50 ns
t
ri
50 ns
t
d(off)
150 250 ns
t
fi
170 300 ns
E
off
1.3 2.6 mJ
t
d(on)
55 ns
t
ri
75 ns
E
on
1.2 mJ
t
d(off)
190 ns
t
fi
280 ns
E
off
2.4 mJ
R
thJC
0.83 K/W
R
thCK
0.25 K/W
Inductive load, T
J
= 125
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V,
V
CE
= 0.8 V
CES
, R
G
= 33 Ω
Inductive load, T
J
= 25
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V, L = 100 µH
V
CE
= 0.8 V
CES
, R
G
= 33 Ω
IXSP 24N60B
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 Outline
