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2SA1774G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 9
1 Publication Order Number:
2SA1774/D
2SA1774G, S2SA1774G
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SC−75/SOT−416/SC−90
package which is designed for low power surface mount
applications, where board space is at a premium.
Features
• Reduces Board Space
• High h
FE
, 210−460 (typical)
• Low V
CE(sat)
, < 0.5 V
• Available in 8 mm, 7−inch/3000 Unit Tape and Reel
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Value Unit
Collector − Emitter Voltage V
(BR)CBO
−60 Vdc
Collector − Base Voltage V
(BR)CEO
−50 Vdc
Emitter − Base Voltage V
(BR)EBO
−6.0 Vdc
Collector Current − Continuous I
C
−100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation (Note 1) P
D
150 mW
Junction Temperature T
J
150 °C
Storage Temperature Range T
stg
−55 ~ + 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
MARKING DIAGRAM
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC−75
CASE 463
STYLE 1
1
F9 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
F9 M G
G
Device Package Shipping
†
ORDERING INFORMATION
2SA1774G SC−75
(Pb−Free)
3,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2SA1774T1G SC−75
(Pb−Free)
3,000/Tape & Reel
S2SA1774G SC−75
(Pb−Free)
3,000/Tape & Reel
2SA1774G, S2SA1774G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic Symbol Min Typ Max Unit
Collector−Base Breakdown Voltage
(I
C
= −50 mAdc, I
E
= 0)
V
(BR)CBO
−60 − −
Vdc
Collector−Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−50 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −50 mAdc, I
E
= 0)
V
(BR)EBO
−6.0 − −
Vdc
Collector−Base Cutoff Current
(V
CB
= −30 Vdc, I
E
= 0)
I
CBO
− − −0.5
nA
Emitter−Base Cutoff Current
(V
EB
= −5.0 Vdc, I
B
= 0)
I
EBO
− − −0.5
mA
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
− − −0.5
Vdc
DC Current Gain (Note 2)
(V
CE
= −6.0 Vdc, I
C
= −1.0 mAdc)
h
FE
120 − 560
−
Transition Frequency
(V
CE
= −12 Vdc, I
C
= −2.0 mAdc, f = 30 MHz)
f
T
− 140 −
MHz
Output Capacitance
(V
CB
= −12 Vdc, I
E
= 0 Adc, f = 1 MHz)
C
OB
− 3.5 −
pF
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
2SA1774G, S2SA1774G
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Collector−Emitter Saturation Voltage
vs. Collector Current
1
0.1
0.01
0.1 1.0 10 100 1000
I
C
, COLLECTOR CURRENT (mA)
V
CE
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
T
A
= 150°C
T
A
= 25°C
T
A
= −55°C
I
C
/I
B
= 10
Figure 2. Base−Emitter Saturation Voltage vs.
Collector Current
1.2
0.1 1.0 10 100 1000
I
C
, COLLECTOR CURRENT (mA)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
A
= −55°C
I
C
/I
B
= 10
T
A
= 25°C
T
A
= 150°C
Figure 3. DC Current Gain vs. Collector
Current
1000
0.1 1.0 10 100 1000
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
T
A
= 150°C
T
A
= 25°C
T
A
= −55°C
V
CE
= 6 V
Figure 4. Saturation Region
2.0
I
B
, BASE CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1 1.0 10 1000.01
I
C
= 100 mA
I
C
= 50 mA
I
C
= 30 mA
I
C
= 10 mA
T
A
= 25°C
Figure 5. Base−Emitter Turn−ON Voltage vs.
Collector Current
1
0.1 1.0 10 100 1000
I
C
, COLLECTOR CURRENT (mA)
V
BE(ON)
, BASE−EMITTER ON
VOLTAGE (V)
T
A
= 150°C
T
A
= 25°C
T
A
= −55°C
V
CE
= 2 V
Figure 6. Capacitance
100
V
R
, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
0.1 1.0 10 100
10
1
C
ibo
C
obo
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
100
10
P1-P3P4-P5

2SA1774G

Mfr. #:
Buy 2SA1774G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 60V PNP
Lifecycle:
New from this manufacturer.
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