AON2408
Symbol Min Typ Max Units
BV
DSS
20 V
V
DS
=20V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
0.5 0.83 1.2 V
I
D(ON)
32 A
11.6 14.5
T
J
=125°C 16.3 20.5
15 19 mΩ
g
FS
50 S
V
SD
0.65 1 V
I
S
3.5 A
C
iss
782 pF
C
oss
158 pF
C
rss
98 pF
R
g
2.4 Ω
Q
g
7 nC
Q
gs
1 nC
Q
gd
2.4 nC
t
D(on)
3 ns
t
r
4.5 ns
I
S
=1A,V
GS
=0V
Turn-On Rise Time
Diode Forward Voltage
V
GS
=0V, V
DS
=0V, f=1MHz
Gate Drain Charge
Input Capacitance
Output Capacitance
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
GS
=2.5V, I
D
=4A
V
DS
=5V, I
D
=8A
Forward Transconductance
V
GS
=4.5V, V
DS
=5V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
µA
V
DS
=V
GS
,
I
D
=250µA
V
GS
=4.5V, I
D
=8A
Turn-On DelayTime
V
GS
=4.5V, V
DS
=10V, R
L
=1.25Ω,
Gate resistance
Total Gate Charge
Reverse Transfer Capacitance
V
GS
=4.5V, V
DS
=10V, I
D
=8A
Gate Source Charge
Drain-Source Breakdown Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
V
DS
=0V, V
GS
=±12V
V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
mΩ
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
On state drain current
I
D
=250µA, V
GS
=0V
D(off)
t
f
6 ns
t
rr
11 ns
Q
rr
2.7
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=8A, dI/dt=100A/µs
GEN
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=8A, dI/dt=100A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The Power dissipation P
DSM
is based on R
θJA
t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 0 : Dec. 2011 www.aosmd.com Page 2 of 6
