2SK3320
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3320
For Low Noise Audio Amplifier Applications
• Two devices in a ultra super mini (five pins) package
• High |Y
fs
|: |Y
fs
| = 15 mS (typ.) (V
DS
= 10 V, V
GS
= 0)
• High breakdown voltage: V
GDS
= −50 V
• Super low noise: NF = 1.0dB (typ.)
(V
DS
= 10 V, I
D
= 0.5 mA, f = 1 kHz, R
G
= 1 kΩ)
• High input impedance: I
GSS
= −1 nA (max) (V
GS
= −30 V)
Absolute Maximum Ratings
(Ta
=
25°C)
(Q1, Q2 common)
Characteristics Symbol Rating Unit
Gate-drain voltage V
GDS
−50 V
Gate current I
G
10 mA
Drain power dissipation
P
D
(Note 1)
200 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking Pin Assignment
(top view)
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2L1B
Weight: 6.2 mg (typ.)
Start of commercial production
1999-01
