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SI1026X-T1-GE3

P1-P3P4-P6P7-P7
Vishay Siliconix
Si1026X
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
www.vishay.com
1
N-Channel 60 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low On-Resistance: 1.40
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 15 ns (typ.)
• Low Input and Output Leakage
• ESD Protected: 2000 V
• Miniature Package
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Error Voltage
• Small Board Area
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
PRODUCT SUMMARY
V
DS(min)
(V) R
DS(on)
()V
GS(th)
(V) I
D
(mA)
60
1.40 at V
GS
= 10 V
1 to 2.5 500
Marking Code: E
Top View
3
1
D
2
G
2
S
1
52
4
6
D
1
S
2
G
1
SC-89
Ordering Information:
Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
320 305
mA
T
A
= 85 °C
230 220
Pulsed Drain Current
b
I
DM
- 650
Continuous Source Current (Diode Conduction)
a
I
S
450 380
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
280 250
mW
T
A
= 85 °C
145 130
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
www.vishay.com
2
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
Vishay Siliconix
Si1026X
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 10 µA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA
1 2.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 10 V
± 150
nA
V
DS
= 0 V, V
GS
= ± 5 V
± 50
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 85 °C
10
On-State Drain Current
a
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
500
mA
V
DS
= 7.5 V, V
GS
= 10 V
800
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 200 mA
3.0
V
GS
= 10 V, I
D
= 500 mA
1.40
V
GS
= 10 V, I
D
= 500 mA, T
J
= 125 °C
2.50
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 200 mA
200 mS
Diode Forward Voltage
a
V
SD
V
GS
= 0 V, I
S
= 200 mA
1.40 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 10 V, I
D
= 250 mA, V
GS
= 4.5 V
600
pCGate-Source Charge
Q
gs
120
Gate-Drain Charge
Q
gd
225
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
30
pFOutput Capacitance
C
oss
6
Reverse Transfer Capacitance
C
rss
3
Switching
b, c
Tur n - On T im e
t
(on)
V
DD
= 30 V, R
L
= 150
I
D
= 200 mA, V
GEN
= 10 V, R
g
= 10
15
ns
Turn-Off Time
t
(off)
20
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
www.vishay.com
3
Vishay Siliconix
Si1026X
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1.0
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V thru 7 V
3 V
5 V
4 V
6 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 200 400 600 800 1000
I
D
- Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
0
1
2
3
4
5
6
7
0.0 0.1 0.2 0.3 0.4 0.5 0.6
V
DS
= 10 V
I
D
= 250 mA
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
300
600
900
1200
0123456
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (mA)I
D
T
J
= - 55 °C
125 °C
25 °C
0
10
20
30
40
50
0 5 10 15 20 25
V
DS
- Drain-to-Source Voltage (V)
C-
Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0 V
f = 1 MHz
0.0
0.4
0.8
1.2
1.6
2.0
- 50 - 25 0 25 50 75 100 125 150
T
J
- J unction Temperature (°C)
V
GS
= 10 V at 500 mA
V
GS
= 4.5 V
at 200 mA
(Normalized)
- On-Resistance
R
DS(on)
P1-P3P4-P6P7-P7

SI1026X-T1-GE3

Mfr. #:
Buy SI1026X-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds 20V Vgs SC89-6
Lifecycle:
New from this manufacturer.
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