© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 6
1 Publication Order Number:
MC14015B/D
MC14015B
Dual 4−Bit Static
Shift Register
The MC14015B dual 4−bit static shift register is constructed with
MOS P−Channel and N−Channel enhancement mode devices in a
single monolithic structure. It consists of two identical, independent
4−state serial−input/parallel−output registers. Each register has
independent Clock and Reset inputs with a single serial Data input.
The register states are type D master−slave flip−flops. Data is shifted
from one stage to the next during the positive−going clock transition.
Each register can be cleared when a high level is applied on the Reset
line. These complementary MOS shift registers find primary use in
buffer storage and serial−to−parallel conversion where low power
dissipation and/or noise immunity is desired.
Features
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Logic Edge−Clocked Flip−Flop Design
• Logic state is retained indefinitely with clock level either high or
low; information is transferred to the output only on the positive
going edge of the clock pulse
• Capable of Driving Two Low−power TTL Loads or One Low−power
Schottky TTL Load Over the Rated Temperature Range
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Voltages Referenced to V
SS
)
Symbol Parameter Value Unit
V
DD
DC Supply Voltage Range −0.5 to +18.0 V
V
in
, V
out
Input or Output Voltage Range
(DC or Transient)
−0.5 to V
DD
+ 0.5 V
I
in
, I
out
Input or Output Current
(DC or Transient) per Pin
± 10 mA
P
D
Power Dissipation, per Package
(Note 1)
500 mW
T
A
Ambient Temperature Range −55 to +125 °C
T
stg
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature
(8−Second Soldering)
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
v (V
in
or V
out
) v V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either V
SS
or V
DD
). Unused outputs must be left open.
http://onsemi.com
MARKING
DIAGRAMS
PDIP−16
P SUFFIX
CASE 648
MC14015BCP
AWLYYWWG
SOIC−16
D SUFFIX
CASE 751B
TSSOP−16
DT SUFFIX
CASE 948F
14015BG
AWLYWW
14
015B
ALYW
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G = Pb−Free Indicator
SOEIAJ−16
F SUFFIX
CASE 966
MC14015B
ALYWG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
16
1
1
16
1
16
1
16
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
