FEPB16FTHE3/45

FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 88596
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Ultrafast Plastic Rectifier
FEATURES
Power pack
Glass passivated pellet chip junction
Ultrafast recovery time
Low switching losses, high efficiency
High forward surge capability
AEC-Q101 qualified
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for TO-263AB package)
Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 8.0 A
V
RRM
50 V to 600 V
I
FSM
200 A, 125 A
t
rr
35 ns, 50 ns
V
F
0.95 V, 1.30 V, 1.50 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
FEP16xT
ITO-220AB
FEPF16xT
FEPB16xT
PIN 1
PIN 2
K
HEATSINK
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
1
2
3
1
2
K
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT
Maximum repetitive peak reverse
voltage
V
RRM
50 100 150 200 300 400 500 600 V
Maximum RMS voltage
V
RMS
35 70 105 140 210 280 350 420 V
Maximum DC blocking voltage
V
DC
50 100 150 200 300 400 500 600 V
Maximum average forward
rectified current at T
C
= 100 °C
I
F(AV)
16 A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
I
FSM
200 125 A
Operating storage and temperature
range
T
J
, T
STG
-55 to +150 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
2
Document Number: 88596
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
FEP
16AT
FEP
16BT
FEP
16CT
FEP
16DT
FEP
16FT
FEP
16GT
FEP
16HT
FEP
16JT
UNIT
Maximum instantaneous
forward voltage per diode
8.0 A V
F
(1)
0.95 1.30 1.50 V
Maximum DC reverse
current per diode at rated DC
blocking voltage
T
C
= 25 °C
I
R
10
μA
T
C
= 100 °C 500
Maximum reverse recovery
time per diode
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
35 50 ns
Typical junction capacitance
per diode
4.0 V, 1 MHz C
J
85 60 pF
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL FEP FEPF FEPB UNIT
Typical thermal resistance from junction to case per diode R
JC
2.2 3.1 2.2 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB FEP16JT-E3/45 1.85 45 50/tube Tube
ITO-220AB FEPF16JT-E3/45 1.97 45 50/tube Tube
TO-263AB FEPB16JT-E3/45 1.35 45 50/tube Tube
TO-263AB FEPB16JT-E3/81 1.35 81 800/reel Tape and reel
TO-220AB FEP16JTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB FEPF16JTHE3/45
(1)
1.97 45 50/tube Tube
TO-263AB FEPB16JTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB FEPB16JTHE3/81
(1)
1.35 81 800/reel Tape and reel
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
3
Document Number: 88596
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
0
50
100
150
0
4
8
12
16
20
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
0
50
100
150
200
250
300
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
0.2
0.6
0.4
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
50 V to 200 V
300 V to 400 V
500 V to 600 V
0
20
40
60
80
100
0.1
0.01
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
50 V to 400 V
500 V to 600 V
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
0.1
1
10
100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
50 V to 400 V
500 V to 600 V

FEPB16FTHE3/45

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 16A 300V 50ns Dual 125 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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