TISP4310T3BJR-S

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JUNE 2007 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4310T3BJ Overvoltage Protector
TISP4310T3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR
SMB Package (Top View)
Device Symbol
Description
This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically
used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems).
Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The device consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping.
If sufficient current is available from the overvoltage, the breakdown voltage will rise to the breakover level, which causes the device to
switch into a low-voltage on-state condition. This switching action removes the high-voltage stress from the following circuitry and causes
the current resulting from the overvoltage to be safely diverted through the device. The high holding (switch off) current helps prevent
d.c. latchup as the diverted current subsides. This device is designed to voltage limit and withstand the listed lightning surges in both
polarities.
How To Order
Industry-Leading V
DRM
to V
(BO)
Ratio
Modem Protection Against:
– TIA-968-A Type A & B Surge
– UL 60950, Clause 6. Power Cross
– CSA 22.2 No. 60950, Clause 6. Power Cross
Ion-Implanted Breakdown Region
– Precise and Stable Voltage
Low Voltage Overshoot Under Surge
Rated for International Surge Wave Shapes
12
(Tip)(Ring)
MD-SMB-007-a
Terminal typical application names
shown in parenthesis
(Ring)
SD-TISP4-001-a
(Tip)
Device Name
V
DRM
V
V
(BO)
V
TISP4310T3BJ 269 310
Wave Shape Standard
I
PPSM
A
10/160 TIA-968-A 150
10/700 ITU-T K.20/21/45 120
9/720 TIA-968-A 120
10/560 TIA-968-A 100
10/1000 GR-1089-CORE 80
Device Package Carrier Order As Marking Code Standard Quantity
TISP4310T3BJ SMB Embossed Tape Reeled TISP4310T3BJR-S 4310T3 3000
*RoHS COMPLIANT
..........................................UL Recognized Component
JUNE 2007 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4310T3BJ Overvoltage Protector
Description (Continued)
After a TIA-968-A Type A surge, the equipment can be faulty, provided that the fault mode causes the equipment to be unusable. There
are two wave shapes used: 10/160 for longitudinal surges and 10/560 for metallic surges. For modems with a TISP4310T3BJ connected
between the Ring and Tip wires (and without overvoltage protection to ground), the longitudinal 10/160 surge applied to both Ring and
Tip will not activate the TISP4310T3BJ, giving an operational pass. The metallic 10/560 surge is applied between Ring and Tip wires
and will operate the TISP4310T3BJ. As the TISP4310T3BJ has a current rating of 100 A 10/560, it will survive the TIA-968-A Type A 100
A 10/560 metallic surge, giving an operational pass.
After a TIA-968-A Type B surge, the equipment must be operational. The 9/720 wave shape is used for both longitudinal surges and
metallic surges. For modems with a TISP4310T3BJ connected between the Ring and Tip wires (and without overvoltage protection to
ground), the longitudinal 9/720 surge applied to both Ring and Tip will not activate the TISP4310T3BJ, giving an operational pass. The
metallic 9/720 surge is applied between Ring and Tip wires and will operate the TISP4310T3BJ. As the TISP4310T3BJ has a current
rating of 120 A 9/720, it will survive the TIA-968-A Type B 25 A 9/720 metallic surge, giving an operational pass.
The TIA-968-A B-type ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V. The TISP4310T3BJ
will not clip the B-type ringing voltage, as it has a high impedance up to 269 V.
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
tinUeulaVlobmySgnitaR
V)1 etoN ees( egatlov etats-ffo kaep evititepeR
DRM
±269 V
Non-repetitive peak impulse current (see Notes 1 and 2)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
5/320 µs (TIA-968-A, 9/720 µs voltage wave shape)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
I
PPSM
±150
±120
±120
±100
±80
A
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
I
TSM
25
30
2.1
A
20 ms, 50 Hz (full sine wave)
16.7 ms, 60 Hz (full sine wave)
1000 s, 50 Hz or 60 Hz a.c.
Initial rate of rise of on-state currrent, exponential current ramp. Maximum ramp value < 50 A di
T
/dt 500 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. Initially the device must be in thermal equilibrium with T
J
= 25 °C.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.
tinUxaMpyTniMtnenopmoC
R
S
Series resistor for TIA-968-A, 10/160 type A surge surviv 5.2)noitcennoc G-R ro G-T( la
Series resistor for 0lavivrus egrus A epyt 065/01 ,A-869-AIT
Series resistor for 0lavivrus egrus B epyt 027/9
,A-869-AIT
5lavivrus egrus level-tsrif EROC-9801-RG rof rotsiser seireS
0lavivrus egrus 007/01 ,Vk 5.1
54.K dna 12.K ,02.K rof rotsiser seireS
Series resistor for K.20, K.21 and K.45 co-o 6rotcetorp yramirp V004 a htiw noitanidr
Recommended Operating Conditions
JUNE 2007 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4310T3BJ Overvoltage Protector
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
tidnoC tseTretemaraP tinUxaMpyTniMsnoi
I
DRM
Repetitive peak off-state current V
D
= V
DRM
T
A
= 25 °C
T
A
= 85 °C
±5
±10
µA
V
(BO)
Breakover voltage dv/dt = ±250 V/ms, R
SOURCE
= 300 ±310 V
I
(BO)
Breakover current dv/dt = ±250 V/ms, R
SOURCE
= 300 ±800 mA
V
T
On-state voltage I
T
5A, t
w
V3±sµ001=
I
H
Holding current I
T
Am051±sm/Am03±=td/id ,A5±=
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp
Maximum ramp value < 0.85V
DRM
±5 kV/µs
C
O
Off-state capacitance f = 1 MHz, V
d
= 1 V rms
V
D
= 0
V
D
= -1 V
V
D
= -2 V
V
D
= -50V
V
D
= -100 V
54
48
43
20
16
65
58
52
24
19
pF
tinUxaMpyTniMsnoitidnoC tseTretemaraP
R
θJA
Junction to ambient thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
(see Note 4)
115
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
52
NOTE: 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Thermal Characteristics, T
A
= 25 °C (Unless Otherwise Noted)

TISP4310T3BJR-S

Mfr. #:
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) PROTECTOR - SINGLE BIDIRECTIONAL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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