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BGF121E6329XTSA1

P1-P3P4-P6P7-P7
Data Sheet 4 V2.2, 2009-06-16
BGF121
Transient Voltage Suppressor
Transient Voltage Suppressor
Description
The BGF121 is a single line TVS diode designed for transient voltage and power overstress suppression. All pins
are protected against ESD pulses of
±15 kV contact discharge according to IEC61000-4-2. The wafer level
package is a green package with a size of only 0.75
mm x 0.75 mm and a total height of 0.60 mm.
Figure 1 Schematic
Features
• 1 channel TVS diode designed for portable application
• ESD protection according to IEC61000-4-2
for ±15 kV contact discharge on all IOs
• Wafer Level Package with SnAgCu solder balls
• RoHS and WEEE compliant package
• Very small form factor
TVS
• High peak pulse power
• Stand-off voltage up to 10 V
• Low clamping voltage factor Vcl/Vbr
• Fast response time
Type Package Marking Chip
BGF121 WLP-4-1 21 N0743
WLP-4-1-3D
A2
B2 (GND)
A1
B1 ( GND)
BGF121
Transient Voltage Suppressor
Data Sheet 5 V2.2, 2009-06-16
Table 1 Maximum Ratings
Parameter Symbol Values Unit Note /
Test
Condition
Min. Typ. Max.
Voltage at all pins to GND V
P
0 – 10 V –
Operating temperature range T
OP
-30 – +85 °C –
Storage temperature range T
STG
-55 – +150 °C –
Electrostatic Discharge According to
IEC61000-4-2
V
ESD
-15 – 15 kV –
Table 2 Electrical Characteristics
1)
1) Otherwise specified at T
A
= 25 °C
Parameter Symbol Values Unit Note /
Test
Condition
Min. Typ. Max.
Line capacitance to GND C
T
160 pF V
R
= 0 V
Forward voltage V
F
2)
2) To avoid high temperature and possible disassembling of component from the board, DC current operation to be limited to
few seconds
1.1 1.3 V I
F
= 850 mA
Break down voltage V
BR
16
16.9
17.7
V I
R
= 15 mA
T
A
= -30 °C
T
A
= 25 °C
Clamping voltage during transient V
CL
3)
3) 8/20 µs pulse waveform according to IEC61000-4-5
18.7 20 V I
R
= 1 A,
T
A
= 85 °C
Leakage current of line to GND I
R
1
10
100
800
nA V
R
= 10 V
T
A
= -30 °C
T
A
= 25 °C
T
A
= 85 °C
Data Sheet 6 V2.2, 2009-06-16
BGF121
Transient Voltage Suppressor
Figure 2 Line Capacitance vs reverse voltage (typical values) at 25°C
Figure 3 Peak pulse reverse current (IEC61000-4-5) versus clamping voltage (typical values) at 25°C
Line Capacitance BGF121
0
50
100
150
200
0246810
Voltage [V]
Line Capacitance [pF]
BGF121 Peak pulse current vs clamping voltage
1.0
10.0
100.0
17 19 21 23 25 27 29
Clamping Voltage V
CL
[V]
Reverse Current I
R
[A]
P1-P3P4-P6P7-P7

BGF121E6329XTSA1

Mfr. #:
Buy BGF121E6329XTSA1
Manufacturer:
Infineon Technologies
Description:
TVS DIODE 10V 20V WLP-4-1
Lifecycle:
New from this manufacturer.
Delivery:
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