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PC353T

P1-P3P4-P6P7-P9P10-P12
Sheet No.: D2-A00401EN
■ Electro-optical Characteristics
Parameter Conditions
Forward voltage
Reverse Current
Terminal capacitance
Collector dark current
Transfer
charac-
teristics
Collector-base breakdown voltage
Collector current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
MIN.
−
−
−
−
80
2.5
−
5×10
10
−
−
−
TYP.
1.2
−
30
−
−
−
−
0.1
1×10
11
0.6
4
3
MAX.
1.4
10
250
100
−
−
30
0.2
−
1.0
18
18
Unit
V
V
µA
pF
nA
V
mA
V
Ω
pF
µs
µs
Symbol
V
F
I
R
C
t
I
CEO
BV
CEO
BV
CBO
I
C
V
CE (sat)
C
f
t
r
t
f
R
ISO
Response time
Rise time
Fall time
Input
Output
I
F
=20mA
V
R
=4V
V=0, f=1kHz
V
CE
=20V, I
F
=0
I
C
=0.1mA, I
F
=0
I
C
=0.1mA, I
F
=0
Emitter-collector breakdown voltage
6 −−VBV
ECO
I
E
=10µA, I
F
=0
I
F
=5mA, V
CE
=5V
DC500V, 40 to 60%RH
V
CE
=2V, I
C
=2mA, R
L
=100Ω
V=0, f=1MHz
I
F
=20mA, I
C
=1mA
80
(T
a
=25˚C)
■ Absolute Maximum Ratings
(T
a
=25˚C)
Parameter Symbol Unit
Input
Forward current mA
*1
Peak forward current A
Power dissipation mW
Output
Collector-emitter voltage
V
Emitter-collector voltage
V
Collector current mA
Collector power dissipation
mW
Total power dissipation mW
*2
Isolation voltage
Operating temperature ˚C
Storage temperature ˚C
*3
Soldering temperature
I
F
I
FM
P
V
CEO
V
ECO
I
C
P
C
P
tot
V
iso (rms)
T
opr
T
stg
T
sol
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
Rating
50
1
70
Reverse voltage VV
R
6
80
6
Collector-base voltage
VV
CBO
80
Emitter-base voltage
VV
EBO
6
50
150
170
−30 to +100
−40 to +125
260
3.75 kV
4
PC353T
Sheet No.: D2-A00401EN
1
2
5
10
20
50
100
200
500
−25˚C
0˚C
25˚C
50˚C
Forward current I
F
(mA)
Forward voltage V
F
(V)
T
a
=75˚C
0 0.5 1.0 1.5 2.0 2.5 3.0
Fig.6 Forward Current vs. Forward Voltage
10 000
1 000
10
100
Pulse width≤100µs
Ta=25˚C
Duty ratio
Peak forward current I
FM
(mA)
110
−3
10
−2
10
−1
Fig.5 Peak Forward Current vs. Duty Ratio
10
50
40
30
0
20
Ambient temperature T
a
(˚C)
Forward current I
F
(mA)
025 1007555−30
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
200
150
100
0
50
Collector power dissipation P
c
(mW)
Ambient temperature T
a
(˚C)
025 1007550−30
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
Fig.4 Total Power Dissipation vs. Ambient
Temperature
5
70
40
0
60
80
100
20
Diode power dissipation P (mW)
Ambient temperature T
a
(˚C)
025 1007555−30
170
50
0
100
150
200
Total power dissipation P
tot
(mW)
Ambient temperature T
a
(˚C)
025 1007550−30
PC353T
Sheet No.: D2-A00401EN
5
5
5
5
5
5
10
−11
10
−10
10
−9
10
−8
10
−7
10
−6
10
−5
V
CE
=20V
Collector dark current I
CEO
(A)
Ambient temperature T
a
(˚C)
−30 0 20 40 60 10080
Fig.11 Collector Dark Current vs. Ambient
Temperature
0.2
0.1
0.5
1
2
5
10
20
50
t
f
t
r
t
d
t
s
100
200
500
V
CE
=2A
I
C
=2mA
T
a
=25˚C
Load resistance R
L
(kΩ)
Response Time (µs)
0.01 0.1 1 10
Fig.12 Response Time vs. Load Resistance
0
50
100
150
I
F
=5mA
V
CE
=5V
Relative current transfer ratio (%)
Ambient temperature T
a
(˚C)
−30 0 40 60 80 10020
Fig.9 Relative Current Transfer Ratio vs.
Ambient Temperature
0
−30 0 20 406080100
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
Ambient temperature T
a
(˚C)
I
F
=20mA
I
C
=1mA
Collector-emitter saturation voltage
V
CE(SAT)
(V)
Current transfer ratio CTR (%)
Forward current I
F
(mA)
0
200
400
R
BE
=∞
R
BE
=500kΩ
R
BE
=100kΩ
0 0.5 1.0 5.0 10 50 100
Fig.7 Current Transfer Ratio vs. Forward
Current
0
I
F
=30mA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
50
40
30
20
10
I
F
=1mA
I
F
=5mA
I
F
=10mA
I
F
=20mA
0105
Fig.8 Collector Current vs. Collector-emitter
Voltage
Fig.10 Collector - emitter Saturation Voltage
vs. Ambient Temperature
6
PC353T
P1-P3P4-P6P7-P9P10-P12

PC353T

Mfr. #:
Buy PC353T
Manufacturer:
Sharp Microelectronics
Description:
OPTOISO 3.75KV TRANS W/BASE 5SMD
Lifecycle:
New from this manufacturer.
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