NVMFS5C410NAFT1G

NVMFS5C410N
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource Voltage vs. Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V) Q
G
, GATE CHARGE (nC)
403020100
1E+1
1E+2
605020100
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
10
100
1000
0.90.8 1.00.70.60.50.40.3
1
Figure 11. Safe Operating Area Figure 12. I
PEAK
vs. Time in Avalanche
V
DS
(V) TIME IN AVALANCHE (s)
1001010.1
1
10
100
1000
1
10
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
(A)
I
PEAK
(A)
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
ISS
C
OSS
C
RSS
V
DS
= 20 V
T
J
= 25°C
I
D
= 50 A
Q
GS
Q
GD
V
GS
= 10 V
V
DS
= 20 V
I
D
= 50 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 150°C
T
J
= 25°C T
J
= 55°C
T
J(initial)
= 100°C
T
J(initial)
= 25°C
1E04 1E02
R
DS(on)
Limit
Thermal Limit
Package Limit
dc
0.01 ms
0.1 ms
1 ms
10 ms
T
C
= 25°C
V
GS
10 V
1E+3
1E+4
1E03
1000
3525155
30 70
T
J
= 125°C
10
100
100
9040 80
1
3
5
7
9
V
GS
= 0 V
NVMFS5C410N
www.onsemi.com
5
Figure 13. Thermal Characteristics
PULSE TIME (sec)
0.010.001 10.0001 0.10.00001 100.000001
0.01
0.1
1
10
100
R
q
JA
(t) (°C/W)
100 1000
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
NVMFS5C410N 650 mm
2
, 2 oz., Cu Single Layer Pad
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NVMFS5C410NT1G 5C410N DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5C410NWFT1G 410NWF DFN5
(PbFree, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C410NT3G 5C410N DFN5
(PbFree)
5000 / Tape & Reel
NVMFS5C410NWFT3G 410NWF DFN5
(PbFree, Wettable Flanks)
5000 / Tape & Reel
NVMFS5C410NAFT1G 5C410 DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5C410NWFAFT1G 410NWF DFN5
(PbFree, Wettable Flanks)
1500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS5C410N
www.onsemi.com
6
PACKAGE DIMENSIONS
M 3.00 3.40
q 0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO8FL)
CASE 488AA
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20
C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15
D1 4.70 4.90
D2 3.80 4.00
E 6.15
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 c
L
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
NVMFS5C410N/D
LITERATURE FULFILLMENT:
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Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative

NVMFS5C410NAFT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET T6-D3F 40V NFET
Lifecycle:
New from this manufacturer.
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