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MB10H100HE3_A/P

P1-P3P4-P5
MB10H90, MB10H100, MF10H100
www.vishay.com
Vishay General Semiconductor
Revision: 16-Nov-17
1
Document Number: 87727
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for
D
2
PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: ITO-220AC, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
90 V to 100 V
I
FSM
250 A
V
F
0.64 V
I
R
4.5 μA
T
J
max. 175 °C
Package ITO-220AC, D
2
PAK (TO-263AB)
Diode variations Single
PIN 2
PIN 1
ITO-220AC
MF10H100
1
2
PIN 1
PIN 2
K
HEATSINK
1
2
K
MB10H90
MB10H100
D
2
PAK (TO-263AB)
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MB10H90 MB10H100 UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100
VWorking peak reverse voltage V
RWM
90 100
Maximum DC blocking voltage V
DC
90 100
Maximum average forward rectified current I
F(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
250
Peak repetitive reverse current at t
p
= 2.0 µs, 1 kHz I
RRM
0.5
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V
AC
1500 V
MB10H90, MB10H100, MF10H100
www.vishay.com
Vishay General Semiconductor
Revision: 16-Nov-17
2
Document Number: 87727
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 40 ms
Note
(1)
AEC-Q101 qualified
(2)
90 V device available in D
2
PAK (TO-263AB) package only
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT
Maximum instantaneous forward voltage V
F
(1)
I
F
= 10 A T
C
= 25 °C 0.77
V
I
F
= 10 A T
C
= 125 °C 0.64
I
F
= 20 A T
C
= 25 °C 0.88
I
F
= 20 A T
C
= 125 °C 0.73
Maximum reverse current I
R
(2)
Rated V
R
T
J
= 25 °C 4.5 μA
T
J
= 125 °C 6.0 mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MB MF UNIT
Typical thermal resistance R
JC
2.7 5.8 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AC MF10H100HE3_A/P
(1)
1.94 P 50/tube Tube
TO-263AB MB10H100HE3_A/P
(1)(2)
1.33 P 50/tube Tube
TO-263AB MB10H100HE3_A/I
(1)(2)
1.33 I 800/reel Tape and reel
MB10H90, MB10H100, MF10H100
www.vishay.com
Vishay General Semiconductor
Revision: 16-Nov-17
3
Document Number: 87727
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
C
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
4
8
12
20
0
50
100
150
16
180
MF
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
MB
0
50
150
100
250
200
300
1
100
10
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.1 0.2 0.6 0.7 0.8 0.90.3
100
10
0.1
0.01
1.0
0.4 0.5
1.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 100 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
1
1000
0.01
0.1
10 000
100
10
20 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
101
100
1000
10 000
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
0.01
0.1 1
10
10
100
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MB10H100HE3_A/P

Mfr. #:
Buy MB10H100HE3_A/P
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10A,100V,TO-263AB AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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