SIR871DP-T1-GE3 Datasheet SIR871DP-T1-GE3 | P1-P3

SiR871DP

www.vishay.com

Vishay Siliconix

S17-1834-Rev. B, 18-Dec-17

1

Document Number: 76727

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 100 V (D-S) MOSFET

FEATURES

• ThunderFET

®

power MOSFET

•Low R

DS(on)

and thermally enhanced package

increase power density

• 100 % R

g

and UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Active clamp

• Motor drive switch

•DC/DC converter

• Battery and circuit protection

•Load switch

Notes

a. Surface mounted on 1" x 1" FR4 board

b. t = 10 s

c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the s

ingulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

e. Maximum under steady state conditions is 60 °C/W

PRODUCT SUMMARY

V

DS

(V) -100

R

DS(on)

max. () at V

GS

= -10 V 0.0200

R

DS(on)

max. () at V

GS

= -4.5 V 0.0280

Q

g

typ. (nC) 26.5

I

D

(A) -48

Configuration Single

PowerPAK

®

SO-8 Single

Top View

1

6.15 mm

5.15 mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

S

G

D

P-Channel MOSFET

ORDERING INFORMATION

Package SO-8

Lead (Pb)-free and halogen-free SiR871DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

-100

V

Gate-source voltage V

GS

± 20

Continuous drain current (T

J

= 150 °C)

T

C

= 25 °C

I

D

-48

A

T

C

= 70 °C -38.7

T

A

= 25 °C -11.6

a, b

T

A

= 70 °C -9.3

a, b

Pulsed drain current (t = 300 μs) I

DM

-300

Continuous source-drain diode current

T

C

= 25 °C

I

S

-48

T

A

= 25 °C -4.7

a, b

Avalanche current

L = 0.1 mH

I

AS

-35

Single-pulse avalanche energy E

AS

61 mJ

Maximum power dissipation

T

C

= 25 °C

P

D

89

W

T

C

= 70 °C 57

T

A

= 25 °C 5.2

a, b

T

A

= 70 °C 3.3

a, b

Operating junction and storage temperature range T

J

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

c, d

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

a, e

t  10 s R

thJA

19 24

°C/W

Maximum junction-to-case (drain) Steady state R

thJC

1.1 1.4

SiR871DP

www.vishay.com

Vishay Siliconix

S17-1834-Rev. B, 18-Dec-17

2

Document Number: 76727

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= -250 μA -100 - - V

V

DS

temperature coefficient V

DS

/T

J

I

D

= -250 μA

--62-

mV/°C

V

GS(th)

temperature coefficient V

GS(th)

/T

J

-5-

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= -250 μA -1.4 - -2.6 V

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero gate voltage drain current I

DSS

V

DS

= -100 V, V

GS

= 0 V - - -1

μA

V

DS

= -100 V, V

GS

= 0 V, T

J

= 55 °C - - -10

On-state drain current

a

I

D(on)

V

DS

 5 V, V

GS

= -10 V -40 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

= -10 V, I

D

= -20 A - 0.0165 0.0200



V

GS

= -4.5 V, I

D

= -15 A - 0.0230 0.0280

Forward transconductance

a

g

fs

V

DS

= -15 V, I

D

= -20 A - 34 - S

Dynamic

b

Input capacitance C

iss

V

DS

= -50 V, V

GS

= 0 V, f = 1 MHz

- 3395 -

pFOutput capacitance C

oss

-910-

Reverse transfer capacitance C

rss

-55-

Total gate charge Q

g

V

DS

= -50 V, V

GS

= -10 V, I

D

= -20 A - 58 90

nC

V

DS

= -50 V, V

GS

= -4.5 V, I

D

= -20 A

- 26.5 40

Gate-source charge Q

gs

- 12.9 -

Gate-drain charge Q

gd

- 10.2 -

Gate resistance R

g

f = 1 MHz 1 3 5.5 

Turn-on delay time t

d(on)

V

DD

= -50 V, R

L

= 8.1

I

D

 -6.2 A, V

GEN

= -10 V, R

g

= 1 

-1525

ns

Rise time t

r

-1734

Turn-off delay time t

d(off)

- 70 140

Fall time t

f

-1530

Turn-on delay time t

d(on)

V

DD

= -50 V, R

L

= 8.1 

I

D

 -6.2 A, V

GEN

= -4.5 V, R

g

= 1 

- 76 150

Rise time t

r

- 51 100

Turn-off delay time t

d(off)

-3876

Fall time t

f

-1836

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

T

C

= 25 °C

---48

A

Pulse diode forward current

a

I

SM

- - -100

Body diode voltage V

SD

I

S

= -6.2 A

- -0.81 -1.2 V

Body diode reverse recovery time t

rr

I

F

= -10 A, di/dt = 100 A/μs,

T

J

= 25 °C

- 62 124 ns

Body diode reverse recovery charge Q

rr

- 152 304 nC

Reverse recovery fall time t

a

-42-

ns

Reverse recovery rise time t

b

-20-

SiR871DP

www.vishay.com

Vishay Siliconix

S17-1834-Rev. B, 18-Dec-17

3

Document Number: 76727

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

10

100

1000

10000

0

20

40

60

80

100

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 5 V

V

GS

= 3 V

V

GS

= 4 V

10

100

1000

10000

0

0.01

0.02

0.03

0.04

0.05

0 20406080100

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

= 4.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

0 1224364860

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

V

DS

= 75 V

V

DS

= 50 V

V

DS

= 25 V

I

D

= 10 A

10

100

1000

10000

0

20

40

60

80

100

0123456

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

1000

2000

3000

4000

5000

0 20406080100

Axis Title

1st line

2nd line

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0.5

0.8

1.1

1.4

1.7

2.0

-50-25 0 255075100125150

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

2nd line

I

D

= 20 A

V

GS

= 10 V

V

GS

= 4.5 V

SIR871DP-T1-GE3

SIR871DP-T1-GE3

Products related to this Datasheet