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EGF1THE3/67A

P1-P3P4-P4
EGF1T
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 88904
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• Avalanche surge energy capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high voltage rectification of photoflash
application.
MECHANICAL DATA
Case: DO-214BA, molded plastic over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
1300 V
I
FSM
20 A
t
rr
75 ns
E
AS
15 mJ
V
F
at I
F
= 1.0 A 3.0 V
T
J
max. 150 °C
Package DO-214BA (GF1)
Diode variations Single die
DO-214BA (GF1)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EGF1T UNIT
Device marking code ET
Maximum repetitive peak reverse voltage V
RRM
1300 V
Maximum RMS voltage V
RMS
910 V
Maximum DC blocking V
DC
1300 V
Maximum average forward rectified current I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
20 A
Non-repetitive avalanche energy at T
A
= 25 °C, I
AS
= 1 A, L = 30 mH E
AS
15 mJ
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
EGF1T
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
2
Document Number: 88904
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.95" x 0.95" (24 mm x 24 mm) copper pad areas
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL EGF1T UNIT
Maximum instantaneous forward voltage 1.0 A T
J
= 25 °C V
F
(1)
3.0 V
Maximum DC reverse current V
RM
T
J
= 25 °C
I
R
(2)
5.0
μA
T
J
= 125 °C 50
Typical reverse recovery time
I
F
= 0.5 A, I
R
=1.0 A,
I
rr
= 0.25 A
t
rr
75 ns
Typical junction capacitance 4.0 V, 1 MHz C
J
8.0 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EGF1T UNIT
Typical thermal resistance
R
JA
(1)
50
°C/W
R
JL
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGF1T-E3/67A 0.104 67A 1500 7" diameter plastic tape and reel
EGF1T-E3/5CA 0.104 5CA 6500 13" diameter plastic tape and reel
EGF1THE3/67A
(1)
0.104 67A 1500 7" diameter plastic tape and reel
EGF1THE3/5CA
(1)
0.104 5CA 6500 13" diameter plastic tape and reel
0
1.5
25 50 75 100 125 150 175
Average Forward Current (A)
0.5
1.0
T
L
- Lead Temperature (°C)
Forward Surge Current (A)
25
20
15
10
5
0
110
100
Number of Cycles
EGF1T
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
3
Document Number: 88904
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance Per Leg
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
1
10
100
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
1
10
100
0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118 (3.00)
0.040 (1.02)
0.066 (1.68)
0.098 (2.49)
0.108 (2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 (1.93)
MAX.
0.220 (5.58)
REF.
0.060 (1.52)
MIN.
Mounting Pad Layout
Cathode Band
0.066 (1.68)
MIN.
P1-P3P4-P4

EGF1THE3/67A

Mfr. #:
Buy EGF1THE3/67A
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1300 Volt 1.0A 75ns Glass Passivated
Lifecycle:
New from this manufacturer.
Delivery:
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