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JTDB25
25 Watts, 36 Volts, Pulsed
Avionics, 960-1215 MHz
GENERAL DESCRIPTION
The JTDB25 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25ºC
1
97W
Maximum Voltage and Current
BV
CES
55V
BV
EBO
3.5V
I
C
5.0A
Maximum Temperatures
Storage Temperature -65 to +200ºC
Operating Junction Temperature +200ºC
CASE OUTLINE
55AW-1
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
BV
EBO
Emitter – Base Breakdown I
E
= 5 mA 3.5 V
BV
CES
Collector – Emitter Breakdown I
C
= 10 mA 55 V
h
FE
DC – Current Gain I
C
= 500mA, V
CE
= 5V 20
θ
JC
1
Thermal Resistance 1.8 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C
Pout Power Output
F=960-1215 MHz 25 W
Pin Power Input Vcc = 36V 5 W
Gain Power Gain Pulse width = 10µs 7.0 7.5
RL
Return Loss DF=40% 8 dB
VSWR
2
Load Mismatch Tolerance F = 1090 MHz 5:1
NOTES: 1. At Rated Pulse Conditions
2. At Rated Output Power
Rev A: Dec 2009
