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MBRB1045-E3/81

P1-P3P4-P5
MBR10xx, MBRF10xx, MBRB10xx
www.vishay.com
Vishay General Semiconductor
Revision: 23-Jan-14
1
Document Number: 88669
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Barrier Rectifier
FEATURES
• Power pack
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.57 V, 0.70 V
T
J
max. 150 °C
Package
TO-220AC, ITO-220AC,
TO-263AB
Diode variations Single die
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
MBR10xx
MBRF10xx
MBRB10xx
ITO-220AC
PIN 2
PIN 1
1
2
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1035 MBR1045 MBR1050 MBR1060 UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60 V
Maximum average forward rectified current (fig. 1) I
F(AV)
10 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
150
A
Peak repetitive reverse current at t
p
= 2.0 µs, 1 kHz I
RRM
1.0 0.5
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range
T
J
- 65 to + 150
°C
T
STG
- 65 to + 175
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
V
AC
1500 V
MBR10xx, MBRF10xx, MBRB10xx
www.vishay.com
Vishay General Semiconductor
Revision: 23-Jan-14
2
Document Number: 88669
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MBR1535 MBR1545 MBR1550 MBR1560 UNIT
Maximum instantaneous forward voltage V
F
(1)
I
F
= 10 A T
J
= 25 °C - 0.80
V
I
F
= 10 A T
J
= 125 °C 0.57 0.70
I
F
= 20 A T
J
= 25 °C 0.84 0.95
I
F
= 20 A T
J
= 125 °C 0.72 0.85
Maximum instantaneous reverse current
at DC blocking voltage
I
R
(2)
Rated V
R
T
J
= 25 °C 0.10
mA
T
J
= 125 °C 15
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance from juntion to case R
JC
2.0 4.0 2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC MBR1045-E3/45 1.80 45 50/tube Tube
ITO-220AC MBRF1045-E3/45 1.94 45 50/tube Tube
TO-263AB MBRB1045-E3/45 1.33 45 50/tube Tube
TO-263AB MBRB1045-E3/81 1.33 81 800/reel Tape and reel
TO-220AC MBR1045HE3/45
(1)
1.80 45 50/tube Tube
ITO-220AC MBRF1045HE3/45
(1)
1.94 45 50/tube Tube
TO-263AB MBRB1045HE3/45
(1)
1.33 45 50/tube Tube
TO-263AB MBRB1045HE3/81
(1)
1.33 81 800/reel Tape and reel
MBR10xx, MBRF10xx, MBRB10xx
www.vishay.com
Vishay General Semiconductor
Revision: 23-Jan-14
3
Document Number: 88669
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
2
4
6
8
10
12
0
MBR1035, MBR1045
MBR1050, MBR1060
Average Forward Current (A)
0 50 100 150
Case Temperature (°C)
Resistive or Inductive Load
0.1
1
10
100
25
50
75
125
150
175
100
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
MBR1035, MBR1045
MBR1050, MBR1060
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantenous Reverse Current (mA)
MBR1035, MBR1045
MBR1050, MBR1060
0.1
1
10
100
100
1000
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Reverse Voltage (V)
Junction Capacitance (pF)
MBR1035, MBR1045
MBR1050, MBR1060
0.01
0.1
1
10
100
0.1
10
100
1
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
P1-P3P4-P5

MBRB1045-E3/81

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Buy MBRB1045-E3/81
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10 Amp 45 Volt
Lifecycle:
New from this manufacturer.
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