SI9945AEY-T1 Datasheet SI9945AEY-T1 | P1-P3

Vishay Siliconix

Si9945AEY

Document Number: 70758

S09-1341-Rev. F, 13-Jul-09

www.vishay.com

1

Dual N-Channel 60-V (D-S), 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFETs

• 175 °C Maximum Junction Temperature

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

60

0.080 at V

GS

= 10 V

± 3.7

0.100 at V

GS

= 4.5 V

± 3.4

S

1

D

1

G

1

D

1

S

2

D

2

G

2

D

2

SO

-8

5

6

7

8

T op V iew

2

3

4

1

Si9945AEY-T1-E3 (Lead (Pb)-free)

Si9945AEY-T1-GE3 (Lead (Pb)-free and Halogen-free)

Ordering Information:

N-Channel MOSFET

D

1

G

1

S

1

N-Channel MOSFET

D

2

G

2

S

2

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

60

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 175 °C)

a

T

A

= 25 °C

I

D

± 3.7

A

T

A

= 70 °C

± 3.2

Pulsed Drain Current

I

DM

25

Continuous Source Current (Diode Conduction)

a

I

S

2

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

2.4

W

T

A

= 70 °C

1.7

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Junction-to-Ambient

a

t ≤ 10 s

R

thJA

62.5

°C/W

Steady State 93

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2

Document Number: 70758

S09-1341-Rev. F, 13-Jul-09

Vishay Siliconix

Si9945AEY

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

1.0 3 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 60 V, V

GS

= 0 V

1

µA

V

DS

= 60 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V

20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 3.7 A

0.06 0.080

Ω

V

GS

= 4.5 V, I

D

= 3.4 A

0.075 0.100

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 3.7 A

11 S

Diode Forward Voltage

a

V

SD

I

S

= 2.0 A, V

GS

= 0 V

1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 30 V, V

GS

= 10 V, I

D

= 3.7 A

11 20

nCGate-Source Charge

Q

gs

2

Gate-Drain Charge

Q

gd

2

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 30 V, R

L

= 30 Ω

I

D

≅ 1 A, V

GEN

= 10 V, R

g

= 6 Ω

920

ns

Rise Time

t

r

10 20

Turn-Off Delay Time

t

d(off)

21 40

Fall Time

t

f

820

Source-Drain Reverse Recovery Time

t

rr

I

F

= 2.0 A, dI/dt = 100 A/µs

45 80

Document Number: 70758

S09-1341-Rev. F, 13-Jul-09

www.vishay.com

3

Vishay Siliconix

Si9945AEY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

5

10

15

20

25

012345

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

3 V

V

GS

= 10 V thru 5 V

4 V

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

0

0.04

0.08

0.12

0.16

0.20

0 5 10 15 20 25

V

GS

= 10 V

V

GS

= 4.5 V

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0

2

4

6

8

10

0246810

V

DS

= 30 V

I

D

= 3.7 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

25

0123456

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

150 °C

T

C

= - 55 °C

25 °C

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

C

oss

0

200

400

600

800

0 102030405060

C

iss

T

J

- Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

0

0.4

0.8

1.2

1.6

2.0

2.4

- 50 - 25 0 25 50 75 100 125 150 175

V

GS

= 10 V

I

D

= 3.7 A

SI9945AEY-T1

SI9945AEY-T1

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