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BVSS84LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1997
October, 2016 − Rev. 9
1 Publication Order Number:
BSS84LT1/D
BSS84L, BVSS84L
Power MOSFET
Single P-Channel SOT-23
-50 V, 10 W
• SOT−23 Surface Mount Package Saves Board Space
• BV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
50 Vdc
Gate−to−Source Voltage − Continuous V
GS
± 20 Vdc
Drain Current
Continuous @ T
A
= 25°C
Pulsed Drain Current (t
p
≤ 10 ms)
I
D
I
DM
130
520
mA
Total Power Dissipation @ T
A
= 25°C P
D
225 mW
Operating and Storage Temperature
Range
T
J
, T
stg
− 55 to
150
°C
Thermal Resistance − Junction−to−Ambient
R
q
JA
556 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
3
1
2
P−Channel
SOT−23
CASE 318
STYLE 21
PD MG
G
MARKING DIAGRAM & PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
Device Package Shipping
†
ORDERING INFORMATION
BSS84LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BVSS84LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
PD = Specific Device Code
M = Date Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
−50 V
10 W @ 10 V
V
(BR)DSS
R
DS(ON)
MAX
www.onsemi.com
BSS84L, BVSS84L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −250 mAdc)
V
(BR)DSS
−50 − − Vdc
Zero Gate Voltage Drain Current
(V
DS
= −25 Vdc, V
GS
= 0 Vdc)
(V
DS
= −50 Vdc, V
GS
= 0 Vdc)
(V
DS
= −50 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
−
−
−0.1
−15
−60
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±10 nAdc
ON CHARACTERISTICS (Note 1)
Gate−Source Threaded Voltage (V
DS
= V
GS
, I
D
= −250 mA)
V
GS(th)
−0.9 − −2.0 Vdc
Static Drain−to−Source On−Resistance (V
GS
= −5.0 Vdc, I
D
= −100 mAdc) R
DS(on)
− 4.7 10
W
Transfer Admittance (V
DS
= −25 Vdc, I
D
= −100 mAdc, f = 1.0 kHz) |y
fs
| 50 − − mS
DYNAMIC CHARACTERISTICS
Input Capacitance
V
DS
= 5.0 Vdc C
iss
− 36 −
pF
Output Capacitance V
DS
= 5.0 Vdc C
oss
− 17 −
Transfer Capacitance V
DG
= 5.0 Vdc C
rss
− 6.5 −
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
V
DD
= −15 Vdc, I
D
= −2.5 Adc,
R
L
= 50 W
t
d(on)
− 3.6 −
ns
Rise Time t
r
− 9.7 −
Turn−Off Delay Time t
d(off)
− 12 −
Fall Time t
f
− 1.7 −
Gate Charge V
DD
= −40 Vdc, I
D
= −0.5 A,
V
GS
= −10 V
Q
T
− 2.2 − nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
I
S
− − −0.130
A
Pulsed Current I
SM
− − −0.520
Forward Voltage (Note 2) V
GS
= 0 V, I
S
= −130 mA V
SD
− − −2.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1 1.5 2 2.5 3
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
V
DS
= 10 V
150°C
25°C
-55°C
024 10
0
0.15
0.2
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
13 957
-3.25 V
-2.75 V
-2.25 V
-2.5 V
-3.0 V
V
GS
= -3.5 V
4
0.35
0.4
0.5
0.45
T
J
= 25°C
−I
D
, DRAIN CURRENT (AMPS)
−I
D
, DRAIN CURRENT (AMPS)
BSS84L, BVSS84L
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 3. On−Resistance versus Drain Current
0 0.2 0.4 0.6
2
5
6
Figure 4. On−Resistance versus Drain Current
-I
D
, DRAIN CURRENT (AMPS)
Figure 5. On−Resistance Variation with Temperature
1
0.001
0.1
1
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Charge
-V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
25°C
V
GS
= -4.5 V
V
GS
= -10 V
I
D
= -0.52 A
-55 -5 45 95 145
T
J
= 150°C
4
0.6
0.8
0 0.5 1.0 1.5
3
0.01
-55°C25°C
2.0
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.4 0.6
2
5
6
-I
D
, DRAIN CURRENT (AMPS)
V
GS
= -10 V
4
3
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
-6
-2
0
Q
T
, TOTAL GATE CHARGE (pC)
-8
-4
500
V
DS
= -40 V
T
J
= 25°C
1000
I
D
= -0.5 A
1500
0.1 0.3 0.5
150°C
-55°C
7
4.5
5.5
3.5
2.5
6.5
0.1 0.3 0.5
1.2
2
1.4
1.6
1.8
V
GS
= -4.5 V
I
D
= -0.13 A
2000
2.5 3.0
150°C
25°C
-55°C
8
9
7
-5
-1
-7
-3
I
D
, DRAIN CURRENT (AMPS)
P1-P3P4-P4

BVSS84LT1G

Mfr. #:
Buy BVSS84LT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET 50V 130MA 10.0
Lifecycle:
New from this manufacturer.
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