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NSBA115EDXV6T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 1
1 Publication Order Number:
DTA115ED/D
MUN5136DW1,
NSBA115EDXV6
Dual PNP Bias Resistor
Transistors
R1 = 100 kW, R2 = 100 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C, common for Q1 and Q2, unless otherwise noted)
Rating Symbol Max Unit
Collector−Base Voltage V
CBO
50 Vdc
Collector−Emitter Voltage V
CEO
50 Vdc
Collector Current − Continuous I
C
100 mAdc
Input Forward Voltage V
IN(fwd)
40 Vdc
Input Reverse Voltage V
IN(rev)
10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device Package Shipping
†
MUN5136DW1T1G SOT−363 3,000 / Tape & Reel
NSBA115EDXV6T1G SOT−563 4,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MARKING DIAGRAMS
0N = Specific Device Code
M = Date Code*
G =Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SOT−363
CASE 419B
SOT−563
CASE 463A
PIN CONNECTIONS
0N M G
G
1
0N M G
G
1
6
(3)
(2) (1)
Q
1
Q
2
R
1
R
2
R
1
R
2
(4) (5) (6)
MUN5136DW1, NSBA115EDXV6
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
MUN5136DW1 (SOT−363) One Junction Heated
Total Device Dissipation
T
A
= 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
P
D
187
256
1.5
2.0
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
670
490
°C/W
MUN5136DW1 (SOT−363) Both Junction Heated (Note 3)
Total Device Dissipation
T
A
= 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
P
D
250
385
2.0
3.0
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
493
325
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
R
q
JL
188
208
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
NSBA115EDXV6 (SOT−563) One Junction Heated
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
P
D
357
2.9
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
R
q
JA
350
°C/W
NSBA115EDXV6 (SOT−563) Both Junction Heated (Note 3)
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
P
D
500
4.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
R
q
JA
250
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
MUN5136DW1, NSBA115EDXV6
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 0.05
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 150 −
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 1.2 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 1.0 mA)
V
i(on)
3.0 1.6 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 70 100 130
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
400
P
D
, POWER DISSIPATION (mW)
150
(1) (2)
(1) SOT−363; 1.0 x 1.0 inch Pad
(2) SOT−563; Minimum Pad
350
300
P1-P3P4-P6

NSBA115EDXV6T1G

Mfr. #:
Buy NSBA115EDXV6T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Lifecycle:
New from this manufacturer.
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