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IRF6678TR1

P1-P3P4-P6P7-P9P10-P10
IRF6678
www.irf.com 7
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
R
G
V
DD
D.U.T
DirectFET Substrate and PCB Layout, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
S
IRF6678
8 www.irf.com
DirectFET Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET Part Marking
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.028
0.003
0.007
MAX
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
1.01
2.41
0.70
0.08
0.17
MIN
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.59
0.03
0.08
MIN
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.023
0.001
0.003
DIMENSIONS
METRIC
IMPERIAL
IRF6678
www.irf.com 9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
DirectFET Tape & Reel Dimension (Showing component orientation).
REEL DIMENSIONS
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6678). For 1000 parts on 7" reel,
order IRF6678TR1)
STANDARD OPTION (QTY 4800)
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
METRIC
IMPERIAL
TR1 OPTION (QTY 1000)
IMPERIAL
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
METRIC
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
P1-P3P4-P6P7-P9P10-P10

IRF6678TR1

Mfr. #:
Buy IRF6678TR1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 30A DIRECTFET
Lifecycle:
New from this manufacturer.
Delivery:
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