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BD438TG

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 16
1 Publication Order Number:
BD438/D
BD436G, BD438G, BD440G,
BD442G
Plastic Medium Power
Silicon PNP Transistor
This series of plastic, medium−power silicon PNP transistors can be
used for for amplifier and switching applications. Complementary
types are BD437 and BD441.
Features
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD436G
BD438G
BD440G
BD442G
V
CEO
32
45
60
80
Vdc
Collector−Base Voltage
BD436G
BD438G
BD440G
BD442G
V
CBO
32
45
60
80
Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
4.0 Adc
Base Current I
B
1.0 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
36
288
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.5 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4.0 AMP POWER
TRANSISTORS PNP SILICON
Y = Year
WW = Work Week
BD4xx = Device Code
xx = 36, 36T, 38, 38T, 40, 42
G = Pb−Free Package
MARKING DIAGRAM
Device Package Shipping
BD438G TO−225
(Pb−Free)
500 Units/Box
BD436TG TO−225
(Pb−Free)
50 Units/Rail
ORDERING INFORMATION
BD436G TO−225
(Pb−Free)
500 Units/Box
BD438TG TO−225
(Pb−Free)
50 Units/Rail
BD440G TO−225
(Pb−Free)
500 Units/Box
BD442G TO−225
(Pb−Free)
500 Units/Box
YWW
BD4xxG
BASE 3
EMITTER 1
COLLECTOR 2, 4
TO−225
CASE 77−09
STYLE 1
1
2
3
BD436G, BD438G, BD440G, BD442G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Collector−Emitter Breakdown Voltage
(I
C
= 100 mA, I
B
= 0)
BD436G
BD438G
BD440G
BD442G
V
(BR)CEO
32
45
60
80
−
−
−
−
−
−
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mA, I
B
= 0)
BD436G
BD438G
BD440G
BD442G
V
(BR)CBO
32
45
60
80
−
−
−
−
−
−
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 100 mA, I
C
= 0)
V
(BR)EBO
5.0 − −
Vdc
Collector Cutoff Current
(V
CB
= 32 V, I
E
= 0)
BD436G
(V
CB
= 45 V, I
E
= 0)
BD438G
(V
CB
= 60 V, I
E
= 0)
BD440G
(V
CB
= 80 V, I
E
= 0)
BD442G
I
CBO
−
−
−
−
−
−
−
−
0.1
0.1
0.1
0.1
mAdc
Emitter Cutoff Current
(V
EB
= 5.0 V)
I
EBO
− − 1.0
mAdc
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V)
BD436G
BD438G
BD440G
BD442G
h
FE
40
30
20
15
−
−
−
−
−
−
−
−
−
DC Current Gain
(I
C
= 500 mA, V
CE
= 1.0 V)
BD436G
BD438G
BD440G
BD442G
h
FE
85
85
40
40
−
−
−
−
475
475
475
475
−
DC Current Gain
(I
C
= 2.0 A, V
CE
= 1.0 V)
BD436G
BD438G
BD440G
BD442G
h
FE
50
40
25
15
−
−
−
−
−
−
−
−
−
Collector Saturation Voltage
(I
C
= 2.0 A, I
B
= 0.2 A)
BD436G
(I
C
= 3.0 A, I
B
= 0.3 A)
BD438G
BD440G
BD442G
V
CE(sat)
−
−
−
−
−
−
−
−
0.5
0.7
0.8
0.8
Vdc
Base−Emitter On Voltage
(I
C
= 2.0 A, V
CE
= 1.0 V)
BD436G/BD438G
BD440G/BD442G
V
BE(ON)
−
−
−
−
1.1
1.5
Vdc
Current−Gain − Bandwidth Product
(V
CE
= 1.0 V, I
C
= 250 mA, f = 1.0 MHz)
f
T
3.0 − −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BD436G, BD438G, BD440G, BD442G
http://onsemi.com
3
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Collector Saturation Region
I
B
, BASE CURRENT (mA)
2.0
0
0.05
1.6
1.2
0.8
0.4
1.0 2.0 10 70 500
I
C
= 10 mA 100 mA 1.0 A
0.1 100205.0
T
J
=
255C
3.0 300.07 300200507.00.2 0.3 0.5 0.7
3.0 A
Figure 2. Current Gain
200
0
10
80
12 53 100
I
C
, COLLECTOR CURRENT (AMP)
h
FE
, CURRENT GAIN (NORMALIZED)
100
60
40
20
2.0
0.005
I
C
, COLLECTOR CURRENT (AMP)
1.6
1.2
0.8
0.4
0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
VOLTAGE (VOLTS)
Figure 3. “On” Voltage
0.020.030.05 0.1 0.2
V
BE
@ V
CE
= 2.0 V
0.01 0.3 0.5 1.02.0 3.04
.0
Figure 4. Active Region Safe Operating Area
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
4.0
1.0
0.1
2.0 10 20 10
0
0.5
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 150°C
dc
5 ms
1.0 5.0 50
SECONDARY BREAKDOWN
THERMAL LIMIT T
C
= 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED V
CEO
BD438
BD440
BD442
P1-P3P4-P4

BD438TG

Mfr. #:
Buy BD438TG
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT
Lifecycle:
New from this manufacturer.
Delivery:
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