MIAA10WB600TMH

© 2007 IXYS All rights reserved
7 - 8
20070404a
MIAA10WB600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Typical turn on gate charge
Typical switching energy versus collector current
Typical switching energy versus gate resistance
Typical turn-off characteristics of free wheeling diode
330
W
82W
150
W
82W
330
W
150
W
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
11
125 150 175 200 225 250 275 300 325
dif/dt [A/µs]
Irr [A]
90
95
100
105
110
115
120
125
130
135
140
145
150
155
160
trr [ns]
Irr
trr
If = 10A
Vce = 300V
Vge = +/-15V
Tvj = 125°C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0 5 10 15 20 25 30 35 40 45 50 55 60
Qg [nC]
Vge [[V]
Ic = 10A
Vce = 300V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0 2 4 6 8 10 12 14 16 18 20 22
Ic, If [A]
E [mJ]
Eon
Eoff
Erec
Vce = 300V
Vge = +/-15V
Rg = 82
W
Tvj = 125°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
50 75 100 125 150 175 200 225 250 275 300 325 350
Rg [
W
]
E [mJ]
Eon
Eoff
Erec
Ic, If = 10A
Vce = 300V
Vge = +/-15V
Tvj = 125°C
© 2007 IXYS All rights reserved
8 - 8
20070404a
MIAA10WB600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
100
1000
10000
100000
0 25 50 75 100 125 150
T [°C]
Rnom [ ]
Typical turn-off characteristics of free wheeling diode
Typical forward characteristics of brake diode
Typical foward characteristics per rectifier
Typical thermistor resistance versus temperature
W
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 2 4 6 8 10 12 14 16 18 20 22
If [A]
Qrr [µC]
Vce = 300V
Vge = +/-15V
Rg = 82
W
Tvj = 125°C
0
2
4
6
8
10
12
14
16
18
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vf [V]
If [A]
25 °C
125 °C
0
5
10
15
20
25
30
35
40
45
50
55
60
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Vf [V]
If [A]
25 °C
125 °C

MIAA10WB600TMH

Mfr. #:
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 10 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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