AT-42086-TR1G Datasheet AT-42086-TR2G, AT-42086-TR1G, AT-42086-BLKG | P1-P3

AT-42086

Up to 6 GHz Medium Power

Silicon Bipolar Transistor

Data Sheet

Features

•

High Output Power:

20.5 dBm Typical P

1 dB

at 2.0 GHz

• High Gain at 1 dB Compression:

13.5 dB Typical

G

1 dB

at 2.0 GHz

• Low Noise Figure:

1.9 dB Typical

NF

O

at 2.0 GHz

• High Gain-Bandwidth Product: 8.0 GHz Typical f

T

• Surface Mount Plastic Package

• Tape-and-Reel Packaging Option Available

• Lead-free Option Available

Description

Avago’s AT-42086 is a general purpose NPN bipolar tran-

sistor that o ers excellent high frequency performance.

The AT-42086 is housed in a low cost surface mount .085"

diameter plastic package. The 4 micron emitter-to-emitter

pitch enables this transistor to be used in many di erent

functions. The 20 emitter  nger interdigitated geometry

yields a medium sized transistor with impedances that are

easy to match for low noise and medium power applica-

tions. Applications include use in wireless systems as an

LNA, gain stage, bu er, oscillator, and mixer. An optimum

noise match near 50Ω up to 1 GHz, makes this device easy

to use as a low noise ampli er.

The AT-42086 bipolar transistor is fabricated using Avago’s

10 GHz f

T

Self-Aligned-Transistor (SAT) process. The die is

nitride passivated for surface protection. Excellent device

uniformity, performance and reliability are produced by

the use of ion-implantation, self-alignment techniques,

and gold metalization in the fabrication of this device.

86 Plastic Package

Pin Connections

1

4

3

2

EMITTER

BASE

EMITTE

R

COLLECTOR

420

2

AT-42086 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

[1]

V

EBO

Emitter-Base Voltage V 1.5

V

CBO

Collector-Base Voltage V 20

V

CEO

Collector-Emitter Voltage V 12

I

C

Collector Current mA 80

P

T

Power Dissipation

[2,3]

mW 500

T

j

Junction Temperature °C 150

T

STG

Storage Temperature °C -65 to 150

Thermal Resistance

[2]

:

θ

jc

= 140°C/W

Notes:

1. Permanent damage may occur if any

of these limits are exceeded.

2. T

CASE

= 25°C.

3. Derate at 7.1 mW/°C for T

C

> 80°C.

Electrical Speci cations, T

A

= 25°C

Symbol Parameters and Test Conditions Units Min. Typ. Max.

|S

21E

|

2

Insertion Power Gain; V

CE

= 8 V, I

C

= 35 mA f = 1.0 GHz dB 15.0 16.5

f = 2.0 GHz 10.5

f = 4.0 GHz 4.5

P

1 dB

Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 20.5

V

CE

= 8 V, I

C

= 35 mA f= 4.0 GHz 20.0

G

1 dB

1 dB Compressed Gain; V

CE

= 8 V, I

C

= 35 mA f = 2.0 GHz dB 13.5

f = 4.0 GHz 9.0

NF

O

Optimum Noise Figure: V

CE

= 8 V, I

C

= 10 mA f = 2.0 GHz dB 1.9

f = 4.0 GHz 3.5

G

A

Gain @ NF

O

; V

CE

= 8 V, I

C

= 10 mA f = 2.0 GHz dB 13.0

f = 4.0 GHz 9.0

f

T

Gain Bandwidth Product: V

CE

= 8 V, I

C

= 35 mA GHz 8.0

h

FE

Forward Current Transfer Ratio; V

CE

= 8 V, I

C

= 35 mA — 30 150 270

I

CBO

Collector Cuto Current; V

CB

= 8 V µA 0.2

I

EBO

Emitter Cuto Current; V

EB

= 1 V µA 2.0

C

CB

Collector Base Capacitance

[1]

: V

CB

= 8 V, f = 1 MHz pF 0.32

Note:

1. For this test, the emitter is grounded.

3

AT-42086 Typical Performance, T

A

= 25°C

FREQUENCY (GHz)

Figure 3. Insertion Power Gain, Maximum Available

Gain and Maximum Stable Gain vs. Frequency.

V

CE

=8V,I

C

=35mA.

GAIN (dB)

0.1 0.50.3 1.0 3.0 6.0

I

C

(mA)

Figure 1. Output Power and 1 dB Compressed Gain vs.

Collector Current and Frequency. V

CE

=8V.

24

20

16

12

8

4

G

1dB

(dB) P

1dB

(dBm)

0 1020 304050

P

1dB

G

1dB

2.0 GHz

4.0 GHz

40

35

30

25

20

15

10

5

0

MSG

MAG

|S

21E

|

2

I

C

(mA)

Figure 2. Insertion Power Gain vs. Collector Current

and Frequency. V

CE

=8V.

20

16

12

8

4

0

|S

21E

|

2

GAIN (dB)

0 1020 304050

1.0 GHz

2.0 GHz

4.0 GHz

FREQUENCY (GHz)

Figure 4. Noise Figure and Associated Gain vs.

Frequency. V

CE

=8V,I

C

= 10 mA.

GAIN (dB)

24

21

18

15

12

9

6

3

0

4

3

2

1

0

NF

O

(dB)

0.5 2.01.0 3.0 4.0 5.0

G

A

NF

O

AT-42086-TR1G

AT-42086-TR1G

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