HFE4083-322 Product Specification – April 2013
F i n i s a r
Confidential and Proprietary © 2012 Finisar Corporation. All rights reserved Rev. A1 Page 3
II. Electro-Optical Characteristics
Notes:
1. Reliability is a function of temperature, see www.finisar.com for details.
2. Operating power is set by the peak operating current I
PEAK
=I
BIAS
+I
MODULATION
.
3. For the purpose of these tests, I
F
is DC current.
4. Threshold current varies as (T
A
– T
O
)
2
. It may either increase or decrease with temperature,
depending upon relationship of T
A
to T
O
. The magnitude of the change is proportional to the
threshold at T
O
.
5. Slope efficiency is defined as ∆P
O
/∆I
F
.
6. Rise and fall times specifications are the 20% - 80%. Most of the devices will measure <200ps fall
time. Rise and fall times are sensitive to drive electronics.
7. Beam divergence is defined as the total included angle between the 1/e
2
intensity points.
8. To safeguard the VCSEL from current spike damage, short the VCSEL anode and cathode to each
other during photodiode BVR verification testing. Additionally to safeguard the PIN photodiode,
limit the photodiode reverse voltage in accordance with the absolute maximum rating.
VCSEL Parameters Test Condition Symbol Min. Typ. Max. Units Notes
Peak Operating Current Adjustable to establish
operating power
I
peak
12 20 mA 2
Optical Power Output I
F
=12mA Po 0.9 1.8 3.6 mW 2,3
Threshold Current I
TH
1.5 3.5 6 mA
Threshold Current Temperature
Variation
T
A
= 0
C to 70
C
∆ I
TH
-1.5 1.5 mA 4
Slope Efficiency Po =1.3mW
η
0.1 0.25 0.4 mW/mA 5
Slope Efficiency Temperature
variation
T
A
= 0
C to 70
C
∆η /∆T
-0.5 %/
C
Peak Wavelength I
F
=12mA
λ
P
830 850 860 nm
λ
P
Temperature Variation
I
F
=12mA
∆λ
P/
∆T
0.06 nm/
C
Spectral Bandwidth, RMS I
F
=12mA
∆λ
0.85 nm
Laser Forward Voltage I
F
=12 mA V
F
1.6 1.8 2.2 V
Laser Reverse Voltage
I
R
=10 µA
BVR
LD
5 10 V
Rise and Fall Times Prebias Above
Threshold, 20%-80%
t
r
t
f
150
200
300
300
ps 6
Relative Intensity Noise 1 GHz BW, I
F
=12mA RIN -128 -122 dB/Hz
Series Resistance I
F
=12 mA R
S
18 25 40 Ohms
Beam Divergence I
F
=12 mA
θ
5 15 20 Degrees 7
Photodiode Parameters Test Condition Symbol Min. Typ. Max. Units Notes
Monitor Current Po =1.3mW I
PD
0.075 0.250 mA
Monitor current Temperature
Variation
Po =1.3mW
∆I
PD
/∆T
0.2 %/
C
Dark Current Po =0mW, V
R
=3V I
D
20 nA
PD Reverse Voltage
Po =0mW, I
R
=10 µA
BVR
PD
30 115 V 8
PD Capacitance V
R
=0V, Freq=1MHz
V
R
=3V, Freq=1MHz
C 75
40
100
55
pF