BAS116LPH4-7B

BAS116LPH4
Document number: DS35242 Rev. 5 - 2
1 of 4
www.diodes.com
November 2011
© Diodes Incorporated
BAS116LPH4
NEW PRODUCT
SURFACE MOUNT SWITCHING DIODE
Features
Fast Switching Speed
Ultra-Small Leadless Surface Mount Package (1.0*0.6mm)
Ultra-Low Profile Package (0.4mm)
Low Forward Voltage
Fast Reverse Recovery
Low Capacitance
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: X2-DFN1006-2
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Bar
Terminals: Finish - NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0009 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
BAS116LPH4-7B X2-DFN1006-2 10,000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Bottom View
X2-DFN1006-2
5K = Product Type Marking Code
Bar Denotes Cathode Side
5K
BAS116LPH4
Document number: DS35242 Rev. 5 - 2
2 of 4
www.diodes.com
November 2011
© Diodes Incorporated
BAS116LPH4
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
85 V
RMS Reverse Voltage
V
R
(
RMS
)
60 V
Forward Continuous Current (Note 4)
I
FM
215 mA
Repetitive Peak Forward Current
I
FRM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μ
s
@ t = 1.0ms
@ t = 1.0s
I
FSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
300 mW
Thermal Resistance Junction to Ambient Air (Note 4)
R
θ
JA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V
(
BR
)
R
85
V
I
R
= 100μA
Forward Voltage
V
F
0.9
1.0
1.1
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Leakage Current (Note 5)
I
R
5.0
80
nA
nA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
Total Capacitance
C
T
1.5
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
3.0
μs
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
0 25 50 75 100 125 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve, Total Package
A
Note 4
50
100
150
200
250
300
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
0.01
0.1
1
10
100
1,000
0 0.2 0.4 0.6 0.8 1.0 1.2
BAS116LPH4
Document number: DS35242 Rev. 5 - 2
3 of 4
www.diodes.com
November 2011
© Diodes Incorporated
BAS116LPH4
NEW PRODUCT
10 20 30 40 50 60 70 80
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
R
I , INSTANTANEOUS REVERSE CURRENT (µA)
R
0.0001
0.001
0.01
V , DC REVERSE VOLTAGE (V)
Fig. 4 Total Capacitance vs. Reverse Voltage
R
C , TOTAL CAPACITANCE (pF)
T
f=1MHz
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
010203040
Package Outline Dimensions
Suggested Pad Layout
X2-DFN1006-2
Dim Min Max Typ
A 0.34 0.4 0.37
A1 0 0.05 0.03
b 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
E
0.40
L 0.20 0.30 0.25
R 0.05 0.15 0.10
All Dimensions in mm
Dimensions Value (in mm)
Z 1.1
G 0.3
X 0.7
Y 0.4
C 0.7
L
E
b
R
e
D
A1
A
Z
X
C
G
Y

BAS116LPH4-7B

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Diodes - General Purpose, Power, Switching Switching Diode BVR X2-DFN1006-2,10K
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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