ZDT705TA Datasheet ZDT705TC, ZDT705TA | P1-P3

SM-8 DUAL PNP MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 1 - NOVEMBER 1995

PARTMARKING DETAIL  T705

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-140 V

Collector-Emitter Voltage V

CEO

-120 V

Emitter-Base Voltage V

EBO

-10 V

Peak Pulse Current I

CM

-4 A

Continuous Collector Current I

C

-1 A

Operating and Storage Temperature

Range

T

j

:T

stg

-55 to +150 °C

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT

Total Power Dissipation at T

amb

= 25°C*

Any single die on

Both die on equally

P

tot

2.25

2.75

W

Derate above 25°C*

Any single die on

Both die on equally

18

22

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die on

Both die on equally

55.6

45.5

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

ZDT705

3 - 345

C

1

C

1

C

2

C

2

B

1

E

1

B

2

E

2

SM-8

(8 LEAD SOT223)

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

-140 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

CEO(SUS)

-120 V I

C

=-10mA*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-10 V

I

E

=-100µA

Collector Cutoff Current I

CBO

-0.1

-10

µA

V

CB

=-120V

V

CB

=-120V, T

amb

=100°C

Collector Cutoff Current I

CES

-10

µA

V

CE

=-80V

Emitter Cutoff Current I

EBO

-0.1

µA

V

EB

=-8V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-1.3

-2.5

V

I

C

=-1A, I

B

=-1mA*

I

C

=-2A, I

B

=-2mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-1.8 V I

C

=-1A, I

B

=-10mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

-1.7 V I

C

=-1A, V

CE

=-5V*

Static Forward

Current Transfer Ratio

h

FE

3K

2K

30K

I

C

=-10mA, V

CE

=-5V*

I

C

=-100mA, V

CE

=-5V*

I

C

=-1A, V

CE

=-5V*

I

C

=-2A, V

CE

=-5V*

Transition Frequency f

T

160 Typical MHz I

C

=-100mA, V

CE

=-10V

f=20MHz

Input Capacitance C

ibo

90 Typical pF V

EB

=-0.5V, f=1MHz

Output Capacitance C

obo

15 Typical pF V

CE

=-10V, f=1MHz

Switching Times t

on

0.6 Typical

µs

I

C

=-0.5A, V

CE

=-10V

I

B1

=I

B2

=-0.5mA

t

off

0.8 Typical

µs

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

0.01 0.1 20110

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

IC - Collector Current (Amps)

V

CE

(

sa

t

)

- (V

olts)

0.001

0.01 0.1 20

1

10

10k

8k

6k

4k

0

2k

16k

14k

12k

+100°C

+25°C

-55°C

IC - Collector Current (Amps)

h

FE

v I

C

h

F

E

-

G

a

i

n

V

CE

=-5V

0.001

0.01 0.1 20110

-55°C

+25°C

+100°C

+175°C

IC - Collector Current (Amps)

V

BE(sat)

v I

C

V

B

E

(sat)

-

(

V

o

lts

)

I

C

/I

B

=1000

0.001

0.01 0.1 20110

0.8

0.6

1.8

2.4

2.2

2.0

-55°C

+25°C

+100°C

IC - Collector Current (Amps)

V

BE(on)

v I

C

V

B

E

- (V

olts)

V

CE

=-5V

0.001

1.0

0.8

0.6

0.4

1.6

1.4

1.2

1.8

1.0

0.8

0.6

0.4

1.6

1.4

1.2

1.8

1.0

1.6

1.4

1.2

I

C

/I

B

=1000

-55°C

+25°C

+100°C

+175°C

0.2

ZDT705

3 - 346 3 - 347

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

-140 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

CEO(SUS)

-120 V I

C

=-10mA*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-10 V

I

E

=-100µA

Collector Cutoff Current I

CBO

-0.1

-10

µA

V

CB

=-120V

V

CB

=-120V, T

amb

=100°C

Collector Cutoff Current I

CES

-10

µA

V

CE

=-80V

Emitter Cutoff Current I

EBO

-0.1

µA

V

EB

=-8V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-1.3

-2.5

V

I

C

=-1A, I

B

=-1mA*

I

C

=-2A, I

B

=-2mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-1.8 V I

C

=-1A, I

B

=-10mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

-1.7 V I

C

=-1A, V

CE

=-5V*

Static Forward

Current Transfer Ratio

h

FE

3K

2K

30K

I

C

=-10mA, V

CE

=-5V*

I

C

=-100mA, V

CE

=-5V*

I

C

=-1A, V

CE

=-5V*

I

C

=-2A, V

CE

=-5V*

Transition Frequency f

T

160 Typical MHz I

C

=-100mA, V

CE

=-10V

f=20MHz

Input Capacitance C

ibo

90 Typical pF V

EB

=-0.5V, f=1MHz

Output Capacitance C

obo

15 Typical pF V

CE

=-10V, f=1MHz

Switching Times t

on

0.6 Typical

µs

I

C

=-0.5A, V

CE

=-10V

I

B1

=I

B2

=-0.5mA

t

off

0.8 Typical

µs

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

0.01 0.1 20110

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

IC - Collector Current (Amps)

V

CE

(

sa

t

)

- (V

olts)

0.001

0.01 0.1 20

1

10

10k

8k

6k

4k

0

2k

16k

14k

12k

+100°C

+25°C

-55°C

IC - Collector Current (Amps)

h

FE

v I

C

h

F

E

-

G

a

i

n

V

CE

=-5V

0.001

0.01 0.1 20110

-55°C

+25°C

+100°C

+175°C

IC - Collector Current (Amps)

V

BE(sat)

v I

C

V

B

E

(sat)

-

(

V

o

lts

)

I

C

/I

B

=1000

0.001

0.01 0.1 20110

0.8

0.6

1.8

2.4

2.2

2.0

-55°C

+25°C

+100°C

IC - Collector Current (Amps)

V

BE(on)

v I

C

V

B

E

- (V

olts)

V

CE

=-5V

0.001

1.0

0.8

0.6

0.4

1.6

1.4

1.2

1.8

1.0

0.8

0.6

0.4

1.6

1.4

1.2

1.8

1.0

1.6

1.4

1.2

I

C

/I

B

=1000

-55°C

+25°C

+100°C

+175°C

0.2

ZDT705

3 - 346 3 - 347

ZDT705TA

ZDT705TA

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