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SBYV26CHE3/73

P1-P3P4-P5
SBYV26C
www.vishay.com
Vishay General Semiconductor
Revision: 09-Jun-16
1
Document Number: 88735
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Ultrafast Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ideal for printed circuit boards
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded plastic over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Note
(1)
Peak reverse energy measured with 8/20 μs surge
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
600 V
I
FSM
30 A
t
rr
30 ns
V
F
1.3 V
T
J
max. 175 °C
Package DO-204AL (DO-41)
Diode variations Single die
DO-204AL (DO-41)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RRM
600 V
Maximum RMS voltage V
RMS
420 V
Maximum DC blocking voltage V
DC
600 V
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at T
L
= 85 °C (fig. 1)
I
F(AV)
1.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Non repetitive peak reverse energy E
RSM
(1)
5.0 mJ
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
SBYV26C
www.vishay.com
Vishay General Semiconductor
Revision: 09-Jun-16
2
Document Number: 88735
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads
(2)
Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Minimum avalanche
breakdown voltage
100 μA V
BR
600 V
Maximum instantaneous
forward voltage
1.0 A
T
J
= 25 °C
V
F
2.5
V
T
J
= 175 °C 1.3
Maximum DC reverse current
at rated DC blocking voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 165 °C 150
Max. reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
30 ns
Maximum junction capacitance 4.0 V, 1 MHz C
J
45 pF
Maximum reverse recovery
current slope
I
F
= 1 A, V
R
= 30 V, dI
f
/dt = - 1 A/μs dI
r
/dt 7.0 A/μs
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance
R
JA
(1)
70
°C/W
R
JL
(2)
16
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SBYV26C-E3/54 0.339 54 5500 13" diameter paper tape and reel
SBYV26C-E3/73 0.339 73 3000 Ammo pack packaging
0
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Temperature (°C)
0.4
0.2
Mounted on P.C.B.
Lead Mounted
on Heatsink
T
A
= Ambient Temperature
T
L
= Lead Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
SBYV26C
www.vishay.com
Vishay General Semiconductor
Revision: 09-Jun-16
3
Document Number: 88735
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
1
10
100
1 10010
Peak Forward Surge Current (A)
Number of Cycles at 50 Hz
T
J
= T
J
Max.
10 ms Single Half Sine-Wave
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
0.01
0.1
10
100
1
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 165 °C
Pulse Width = 300 μs
1 % Duty Cycle
020 6040 10080
0.01
0.001
0.1
10
1
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 165 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
100
10
1
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Transient Thermal Impedance (°C/W)
0.01 0.1
1
10
100
100
10
1
t - Pulse Duration (s)
P1-P3P4-P5

SBYV26CHE3/73

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Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600 Volt 1.0A 30ns 30 Amp IFSM
Lifecycle:
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