TSH248
Micropower Omni-Polar Hall Effect Switch
1/8
Version: B14
Description
TSH248 Hall-effect sensor is a temperature stable, stress-resistant, micro-power switch. Superior high-
temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-
stabilization. This method reduces the offset voltage normally caused by device over-molding, temperature
dependencies and thermal stress.
TSH248 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal
amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing
is used to take advantage of low-voltage requirements, component matching, very low input-offset errors and
small component geometries.
Features
● CMOS Hall IC Technology
● Solid-State Reliability
● Low power consumption for battery applications
● Operation voltage range from 2.5V~3.5V
Ordering Information
Part No. Package Packing
TSH248CX RFG TSOT-23 3kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Application
● Solid state switch
● Lid close sensor for power supply devices
● Magnet proximity sensor for reed switch
replacement in high duty cycle applications.
● Handheld Wireless Handset Awake Switch (Flip
Cell/PHS Phone/Note Book/Flip Video Set)
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Characteristics
Limit Value
Unit
Supply voltage
V
CC
5
V
Output Voltage
V
OUT
5
V
Reverse voltage
V
CC/OUT
-0.3
V
Magnetic flux density
Unlimited
G
Output current I
OUT
2
mA
Operating Temperature Range
T
OPR
-40 to +85
o
C
Storage temperature range
T
STG
-55 to +150
C
Maximum Junction Temp
T
J
150
C
Thermal Resistance - Junction to Ambient Rθ
JA
543
o
C/W
Thermal Resistance - Junction to Case Rθ
JC
410
o
C/W
Package Power Dissipation P
D
230
mW
Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-
rated conditions for extended periods may affect device reliability.
1. V
CC
2. Output
3. GND
