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SUM90220E-GE3

P1-P3P4-P6P7-P7
SUM90220E
www.vishay.com
Vishay Siliconix
S16-2291-Rev. A, 14-Nov-16
4
Document Number: 75153
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Transconductance
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
1.5
2.0
2.5
3.0
3.5
4.0
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
(V)
T
J
- Temperature (°C)
2nd line
I
D
= 250 µA
10
100
1000
10000
0
0.01
0.02
0.03
0.04
0.05
0.06
45678910
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 150 °C
I
D
= 15 A
10
100
1000
10000
0
15
30
45
60
0 5 10 15 20 25
Axis Title
1st line
2nd line
2nd line
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
I
DM
limited
Limited by R
DS(on)
(1)
T
C
= 25 °C
Single pulse
BVDSS limited
1 ms
100 µs
DC, 10 s,
1 s, 100 ms
SUM90220E
www.vishay.com
Vishay Siliconix
S16-2291-Rev. A, 14-Nov-16
5
Document Number: 75153
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Drain Source Breakdown vs. Junction Temperature I
DAV
vs. Time
Note
a. The power dissipation P
D
is based on T
J
max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
10
100
1000
10000
0
14
28
42
56
70
0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
2nd line
10
100
1000
10000
200
210
220
230
240
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Temperature (°C)
2nd line
I
D
= 10 mA
10
100
0.00001 0.0001 0.001
2nd line
I
DAV
(A)
Time (s)
2nd line
150 °C
25 °C
SUM90220E
www.vishay.com
Vishay Siliconix
S16-2291-Rev. A, 14-Nov-16
6
Document Number: 75153
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75153
.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Single Pulse
Normalized Effective Transient
Thermal Impedance
0.00001
0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Pulse Time (s)
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
P1-P3P4-P6P7-P7

SUM90220E-GE3

Mfr. #:
Buy SUM90220E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 200V Vds 20V Vgs TO-263
Lifecycle:
New from this manufacturer.
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