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NRVTS8120EMFST3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 0
1 Publication Order Number:
NRVTS8120EMFS/D
NRVTS8120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing Diodes
• Reverse Battery Protection
• LED Lighting
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
TRENCH SCHOTTKY
RECTIFIERS
8 AMPERES
120 VOLTS
www.onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE0812 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
TE0812
AYWWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
NRVTS8120EMFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
NRVTS8120EMFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
NRVTS8120EMFS
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
120
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 163°C)
I
F(AV)
8.0 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 161°C)
I
FRM
16 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
− 2.7 °C/W
ELECTRICAL CHARACTERISTICS
Rating Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 1)
(I
F
= 4 A, T
J
= 25°C)
(I
F
= 8 A, T
J
= 25°C)
(I
F
= 4 A, T
J
= 125°C)
(I
F
= 8 A, T
J
= 125°C)
V
F
0.648
0.826
0.542
0.613
−
0.88
−
0.65
V
Instantaneous Reverse Current (Note 1)
(V
R
= 90 V, T
J
= 25°C)
(Rated dc Voltage, T
J
= 25°C)
(V
R
= 90 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
1.3
3.70
1.4
2.4
−
50
−
10
mA
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
NRVTS8120EMFS
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.41.00.80.60.40.20
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
80605040302010
1.E−06
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
0.1
10
1000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
70 90
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
10
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
Figure 6. Current Derating per Device
T
C
, CASE TEMPERATURE (°C)
140135 155150125120
0
6
12
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
130 145
Square Wave
DC
R
q
JC
= 2.7°C/W
T
J
= 25°C
1.2 1.6
T
A
= 175°C
110100 120
1.E−07
1
4
10
2
8
16
14
T
A
= 150°C
T
A
= 175°C
160 175
100
1.8
T
A
= 85°C
1.41.00.80.60.40.2
0.1
1
10
100
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
1.2 1.6
T
A
= 175°C
T
A
= 150°C
T
A
= 85°C
T
A
= 85°C
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
80605040302010
1.E−06
70 90
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
110100 120
T
A
= 175°C
T
A
= 85°C
100 165 170
P1-P3P4-P5

NRVTS8120EMFST3G

Mfr. #:
Buy NRVTS8120EMFST3G
Manufacturer:
ON Semiconductor
Description:
DIODE SCHOTTKY 120V 8A 5DFN
Lifecycle:
New from this manufacturer.
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