OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IS42VM16160D-8BL

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
Integrated Silicon Solution, Inc. - www.issi.com 13
Rev. A
04/11/2012
IS42VM83200D / IS42VM16160D / IS42VM32800D
Every cell in the DRAM requires refreshing due to the capacitor losing its charge over time. The refresh rate is
dependent on temperature. At higher temperatures a capacitor loses charge quicker than at lower temperatures,
requiring the cells to be refreshed more often. Historically, during self refresh, the refresh rate has been set to
accommodate the worst case, or highest temperature range, expected. Thus, during ambient temperatures, the
power consumed during refresh was unnecessarily high because the refresh rate was set to accommodate the higher
temperatures. Setting E4 and E3 allows the DRAM to accommodate more specific temperature regions during self
refresh. The default for ISSI 256Mb Mobile SDRAM is TCSR = 85°C to guarantee refresh operation. This mode of
operation has a higher current consumption because the self refresh oscillator is set to refresh the SDRAM cells
more often than needed. By using an external temperature sensor to determine the operating temperature the Mobile
SDRAM can be programmed for lower temperature and refresh rates, effectively reducing current consumption by
a significant amount. There are four temperature settings, which will vary the self refresh current according to the
selected temperature. This selectable refresh rate will save power when the Mobile DRAM is operating at normal
temperatures.
Partial-Array Self Refresh (PASR)
For further power savings during self refresh, the PASR feature allows the controller to select the amount of memory
that will be refreshed during self refresh. The refresh options are all banks (banks 0, 1, 2, and 3); two banks (banks
0 and 1); and one bank (bank 0). In addition partial amounts of bank 0 (half or quarter of the bank) may be selected.
WRITE and READ commands occur to any bank selected during standard operation, but only the selected banks in
PASR will be refreshed during self refresh. It’s important to note that data in banks 2 and 3 will be lost when the two-
bank option is used. Data will be lost in banks 1, 2, and 3 when the one-bank option is used.
Driver Strength (DS)
Bits E5 and E6 of the EMR can be used to select the driver strength of the DQ outputs. This value should be set
according to the application’s requirements. The default is Full Driver Strength.
Deep Power Down (DPD)
Deep power down mode is for maximum power savings and is achieved by shutting down power to the entire memory
array of the mobile device. Data will be lost once deep power down mode is executed.
DPD mode is entered by having all banks idle, CS and WE held low, with RAS and CAS HIGH at the rising edge of
the clock, while CKE is LOW. CKE must be held LOW during DPD mode. To exit DPD mode, CKE must be asserted
HIGH. Upon exit from DPD mode, at least 200ms of valid clocks with either NOP or COMMAND INHIBIT commands
are applied to the command bus, followed by a full Mobile SDRAM initialization sequence, is required.
14 Integrated Silicon Solution, Inc. - www.issi.com
Rev. A
04/11/2012
IS42VM83200D / IS42VM16160D / IS42VM32800D
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameters Rating Unit
Vdd max Maximum Supply Voltage –0.35 to +2.8 V
Vddq
max Maximum Supply Voltage for Output Buffer –0.35 to +2.8 V
Vin Input Voltage –0.35 to Vddq + 0.5 V
Vout Output Voltage –0.35 to Vddq + 0.5 V
Pd max Allowable Power Dissipation 1 W
Ics output Shorted Current 50 mA
Topr
operating Temperature Com. 0 to +70 °C
Ind. –40 to +85 °C
Tstg Storage Temperature –65 to +150 °C
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to Vss.
ELECTRICAL SPECIFICATIONS
DC RECOMMENDED OPERATING CONDITIONS
IS42VMxxx - 1.8V Operation
Symbol Parameters Min. Typ. Max. Unit
Vdd Supply Voltage 1.7 1.8 1.95 V
V
ddq I/O Supply Voltage 1.7 1.8 1.95 V
Vih
(1)
Input High Voltage 0.8xVddq – Vddq+0.3 V
V
il
(2)
Input Low Voltage -0.3 – 0.8 V
I
il
Input Leakage Current (0V ≤ Vin ≤ Vdd) -1 – +1 µA
Iol
Output Leakage Current (Output disabled, 0V ≤ Vout ≤ Vdd) -1.5 – +1.5 µA
Voh
Output High Voltage Current (Ioh = -100mA) 0.9xV
ddq – – V
V
ol
Output Low Voltage Current (Iol = 100mA) – – 0.2 V
Notes:
1. V
ih (overshoot): Vih (max) = Vddq +1.2V (pulse width < 3ns).
2. V
il (undershoot): Vih (min) = -1.2V (pulse width < 3ns).
3. All voltages are referenced to Vss.
Symbol Parameters Min. Max. Unit
Cin1 Input Capacitance: CLK 2.5 3.5 pF
C
in2 Input Capacitance: All Other Input Pins 2.5 3.8 pF
Ci/o Data Input/Output Capacitance: I/Os 4.0 6.0 pF
CAPACITANCE CHARACTERISTICS - x8, x16
Symbol Parameters Min. Max. Unit
Cin1 Input Capacitance: CLK 2.5 3.5 pF
C
in2 Input Capacitance: All Other Input Pins 2.5 3.8 pF
C
i/o Data Input/Output Capacitance: I/Os 4.0 6.5 pF
CAPACITANCE CHARACTERISTICS - x32
Integrated Silicon Solution, Inc. - www.issi.com 15
Rev. A
04/11/2012
IS42VM83200D / IS42VM16160D / IS42VM32800D
Symbol Parameter Test Condition –8 Unit
I
dd1
(1)
Operating Current One Bank Active, CL = 3, BL = 2,
tclK = tCLK(min), tRC = tRC(min)
90 mA
I
dd2p
(4)
Precharge Standby Current
(In Power-Down Mode)
CKE ≤ V
il (max), tCK = 15ns
CS ≥ V
dd - 0.2V
1 mA
I
dd2ps
(4)
Precharge Standby Current
With Clock Stop
(In Power-Down Mode)
CKE ≤ V
il (max), CLK ≤ Vil (max)
CS ≥ V
dd - 0.2V
1 mA
I
dd2n
(2)
Precharge Standby Current
(In Non Power-Down Mode)
CS ≥ V
dd - 0.2V, CKE ≥ Vih (min)
tCK = 15 ns
20 mA
I
dd2ns Precharge Standby Current
With Clock Stop
(In Non-Power Down Mode)
CS ≥ Vdd - 0.2V, CKE ≥ Vih (min)
All Inputs Stable
7 mA
I
dd3p
(2)
Active Standby Current
(In Power-Down Mode)
CKE ≤ V
il (max), CS ≥ Vdd - 0.2V
tCK = 15 ns, All Banks Active
3 mA
I
dd3ps Active Standby Current
With Clock Stop
(In Power-Down Mode)
CKE ≤ V
il (max), CLK ≤ Vil (max)
CS ≥ V
dd - 0.2V, All Banks Active
3 mA
I
dd3n
(2)
Active Standby Current
(In Non Power-Down Mode)
CS ≥ Vdd - 0.2V, CKE ≥ Vih (min)
tCK = 15 ns, All Banks Active
25 mA
I
dd3ns Active Standby Current
With Clock Stop
(In Non Power-Down Mode)
CS ≥ Vdd - 0.2V, CKE ≥ Vih (min)
All Inputs Stable, All Banks Active
10 mA
I
dd4 Operating Current All Banks Active, BL = Full, CL = 3
tCK = tCK(min)
115 mA
I
dd5 Auto-Refresh Current tRC = tRC(min), tCLK = tCLK(min) 130 mA
I
dd6 Self-Refresh Current CKE ≤ 0.2V 1.2 mA
I
dd7 Self-Refresh: CKE = LOW;
t
cK = tcK (MIN); Address,
Control, and Data bus inputs
are stable
Full Array, 85
o
C
Full Array, 45
o
C
Half Array, 85
o
C
Half Array, 45
o
C
1/4th Array, 85
o
C
1/4th Array, 45
o
C
1/8th Array, 85
o
C
1/8th Array, 45
o
C
1/16th Array, 85
o
C
1/16th Array, 45
o
C
1200
800
1000
670
800
540
700
470
600
400
µA
Izz
(3,4)
Deep Power Down Current CKE ≤ 0.2V 20
µA
DC ELECTRICAL CHARACTERISTICS VDD = 1.8V (x8 and x16)
Notes:
1. I
dd (max) is specified at the output open condition.
2. Input signals are changed one time during 30ns.
3. Izz values shown are nominal at 25
o
C. Izz is not tested.
4. Tested after 500ms delay
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

IS42VM16160D-8BL

Mfr. #:
Buy IS42VM16160D-8BL
Manufacturer:
ISSI
Description:
DRAM 256M (16Mx16) 125MHz Mobile SDRAM 1.8v
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet