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AMMC-6220-W10

P1-P3P4-P6P7-P8
Features
• Wide frequency range: 6 - 20 GHz
• High gain: 23 dB
• Low 50 Ω Noise Figure: 2.0 dB
• 50 Ω Input and Output Match
• Single 3V Supply Bias
Applications
• Microwave Radio systems
• Satellite VSAT, DBS Up/Down Link
• LMDS & Pt-Pt mmW Long Haul
• Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
• WLL and MMDS loops
Description
Avago Technologies’ AMMC-6220 is a high gain, low-
noise amplier that operates from 6 GHz to 20 GHz. This
LNA provides a wide-band solution for system design
since it covers several bands, thus, reduces part inven-
tory. The device has input / output match to 50 Ohm, is
unconditionally stable and can be used as either primary
or sub-sequential low noise gain stage. By eliminating
the complex tuning and assembly processes typically
required by hybrid (discrete-FET) ampliers, the AMMC-
6220 is a cost-eective alternative in the 6 - 20 GHz com-
munications receivers. The backside of the chip is both RF
and DC ground. This helps simplify the assembly process
and reduces assembly related performance variations
and costs. It is fabricated in a PHEMT process to provide
exceptional noise and gain performance. For improved
reliability and moisture protection, the die is passivated
at the active areas.
AMMC-6220 Absolute Maximum Ratings
[1]
Symbol Parameters/Conditions Units Min. Max.
V
d
Positive Drain Voltage V 7
V
g
Gate Supply Voltage V NA
I
d
Drain Current mA 100
P
in
CW Input Power dBm 15
T
ch
Operating Channel Temp. °C +150
T
stg
Storage Case Temp. °C -65 +150
T
max
Maximum Assembly Temp (60 sec max) °C +300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure
that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices
Chip Size: 1700 x 800 µm (67 x 31.5 mils)
Chip Size Tolerance: ± 10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils)
AMMC - 6220
6 - 20 GHz Low Noise Amplier
Data Sheet
2
Gain at 12 GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.
AMMC-6220 DC Specications/Physical Properties
[1]
Symbol Parameters and Test Conditions Units Min. Typ. Max.
I
d
Drain Supply Current
(under any RF power drive and temperature)
(V
d
=3.0 V)
mA 55 70
V
g
Gate Supply Operating Voltage
(I
d(Q)
= 800 (mA))
V NA
q
ch-b
Thermal Resistance
[2]
(Backside temperature, T
b
= 25°C)
°C/W 25
Notes:
1. Ambient operational temperature T
A
=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (q
ch-b
) = 26°C/W at T
channel
(T
c
) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (T
b
) = 25°C calculated from measured data.
AMMC-6220 RF Specications
[3, 4, 5]
(T
A
= 25°C, V
d
=3.0 V, I
d(Q)=
55 mA, Z
o
=50 Ω)
Symbol Parameters and Test Conditions Units Minimum Typical Maximum Sigma
Gain Small-signal Gain
[6]
dB 21 23 0.30
NF Noise Figure into 50 W dB 7-10 GHz = 2.1
10-16 GHz = 1.8
16-20 GHz = 2.0
8 GHz = 2.4
12 GHz = 2.2
18 GHz = 2.4
0.10
P-
1dB
Output Power at 1dB Gain Compres-
sion
dBm +9 0.87
OIP3 Third Order Intercept Point;
Df=100MHz; Pin=-35dBm
dBm +19 1.20
RLin Input Return Loss
[6]
dB -12 -10 0.31
RLout Output Return Loss
[6]
dB -16 -10 0.68
Isol Reverse Isolation
[6]
dB -45 0.50
Notes:
3. Small/Large -signal data measured in wafer form T
A
= 25°C.
4. 100% on-wafer RF test is done at frequency = 8, 12, and 18 GHz.
5. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance may be improved over a
more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching.
6. As derived from measured s-parameters
Return Loss at 12 GHz Noise Figure at 12 GHz
LSL
22 23 24
USL
-11.6 -11.3 -11 -10.7 -10.4 -10.1 -9.8 -9.5
USL
1.7 1.8 1.9
3
AMMC-6220 Typical Performances
(T
A
= 25°C, V
d
=3.0 V, I
D
= 55 mA, Z
in
= Z
out
= 50 Ω unless otherwise stated)
NOTE: These measurements are in a 50 Ω test environment. Aspects of the amplier performance may be improved
over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching.Figure
1. Typical Gain
0
5
10
15
20
25
6 8 10 12 14 16 18 20
Frequency (GHz)
Gain (dB)
-60
-50
-40
-30
-20
-10
0
6 8 10 12 14 16 18 20
Frequency (GHz)
Isolation (dB)
-20
-15
-10
-5
0
6 8 10 12 14 16 18 20
Frequency (GHz)
Input Return Loss(dB)
-30
-20
-10
0
6 8 10 12 14 16 18 20
Frequency (GHz)
Output Return Loss (dB)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
6 8 10 12 14 16 18 20
Frequency [GHz]
Noise Figure [dB]
0
5
10
15
20
25
6 8 10 12 14 16 18 20
Frequency [GHz]
OP1dB (dBm)
0
5
10
15
20
25
OIP3 (dBm)
0
5
10
15
20
25
30
4 6 8 10 12 14 16 18 20 22
Frequency (GHz)
S21 (dB)
25 °C
-40 °C
+85 °C
-60
-50
-40
-30
-20
-10
0
4 6 8 10 12 14 16 18 20 22
Frequency (GHz)
S12 (dB)
25 °C
-40 °C
+85 °C
-20
-15
-10
-5
0
4 6 8 10 12 14 16 18 20 22
Frequency (GHz)
S11 (dB)
25 °C
-40 °C
+85 °C
Figure 2. Typical Isolation
Figure 9. Typical Input Return Loss (s11) over
temperature
Figure 8. Typical Isolation (s12) over tempera-
ture
Figure 7. Typical Gain (s21) over temperature
Figure 6. Typical Output P
-1dB
and 3
rd
Order
Intercept Pt.
Figure 5. Typical Noise Figure into a 50 W load.Figure 4. Typical Output Return Loss
Figure 3 Typical Input Return LossFigure 1. Typical Gain
P1-P3P4-P6P7-P8

AMMC-6220-W10

Mfr. #:
Buy AMMC-6220-W10
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier LNA MMIC 6-18GHz
Lifecycle:
New from this manufacturer.
Delivery:
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