OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

CDBQR0230R

P1-P3P4-P4
CDBQR0230R
Page 1
QW-A1117
REV:C
A
mA
V
V
1
200
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
O
C
O
C
+125
+125
-40TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
uA
V
1
0.6
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VR = 10 V
IF = 200 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Features
-Low reverse current.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BB
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
Comchip Technology CO., LTD.
mW
125
PD
Power Dissipation
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
SMD Schottky Barrier Diode
0402/SOD-923F
Io = 200 mA
VR = 30 Volts
RoHS Device
RATING AND CHARACTERISTIC CURVES (CDBQR0230R)
Capacitance between terminals (PF)
Reverse voltage (V)
Reverse current ( A )
Reverse voltage (V)
1u
1n
10u
100n
0 10 20 25
30
Fig. 2 - Reverse characteristics
0
20
40
60
80
100
0 25 50
75
100 125
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
Fig. 3 - Capacitance between
terminals characteristics
1m
0 1510 20
1
10
100
5
25
30
100u
15
5
10n
Page 2
QW-A1117
REV:C
O
25 C
O
-25 C
O
75 C
O
125 C
Comchip Technology CO., LTD.
570
540
580
560
590
550
AVG:5 68mV
O
Ta=25 C
IF=200mA
n=30pcs
Fig. 5 - VF Dispersion map
600
0
800
400
1000
200
100
300
500
700
900
Fig. 6 - IR Dispersion map
30
0
40
20
50
10
5
15
25
35
45
Fig. 7 - CT Dispersion map
O
Ta=25 C
VR=10V
n=30pcs
AVG:111nA
AVG:1 8.8 pF
O
Ta=25 C
F=1MHz
VR=0V
n=10pcs
f = 1 MHz
Ta = 25
C
Forward voltage (mV)
Reverse current (nA)
Capacitance between
terminals(pF)
Forward current (mA )
0.2 0.40
1
100
0.5
0.1
0.8
Forward voltage (V)
Fig. 1 - Forward characteristics
1000
0.6
0.3
0.1 0.7
10
O
-2
5
C
O
25
C
O
7
5 C
O
1
2
5 C
150
SMD Schottky Barrier Diode
Page 3
QW-A1117
REV:C
Comchip Technology CO., LTD.
B
C
d
D D
2
D
1
E F P P
0
P
1
T
SYMBOL
A
W W
1
(mm)
(inch)
0.026 0.004± 0.045 0.004± 0.024 0.004± 0.061 + 0.004
7.008 0.04±
2.362 MIN.
0.512 0.008±
SYMBOL
(mm)
(inch)
0.069 0.004± 0.138 0.002±
0.157 0.004± 0.157 0.004±
0.079 0.004± 0.009 0.002± 0.315 0.008±
0.531 MAX.
0.75 0.10±
1.15 0.10±
4.00 0.10±
1.55 + 0.10
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±0.60 0.10±
4.00 0.10± 2.00 0.10± 0.22 0.05±
8.00 0.20±
13.5 MAX.
178 1±
0402
(SOD-923F)
0402
(SOD-923F)
SMD Schottky Barrier Diode
Reel Taping Specification
o
1
2
0
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End
Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B
W
P
P0
P1
A
Polarity
P1-P3P4-P4

CDBQR0230R

Mfr. #:
Buy CDBQR0230R
Manufacturer:
Comchip Technology
Description:
Schottky Diodes & Rectifiers DFN 200mA 30V Sm. Sgnl. Schottky
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet