SPEC NO: DSAM8461 REV NO: V.2A DATE: MAR/28/2015 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: L.Q.Xie ERP: 1301003059
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
*Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2.Forward Voltage: +/-0.1V.
3. Wavelength value is traceable to the CIE127-2007 compliant national standards.
4.Excess driving current and/or operating temperature higher than recommended conditions may result in severe light degradation or
premature failure.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min. Typ.
Super Bright Yellow (AlGaInP) White Diffused
150000 400000
Common Cathode,
Rt. Hand Decimal.
*52000 *140000
SC10-11SYKWA
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Super Bright Yellow 590
nm I
F=20mA
λD [1] Dominant Wavelength Super Bright Yellow 590
nm I
F=20mA
Δλ1/2 Spectral Line Half-width Super Bright Yellow 20
nm I
F=20mA
C Capacitance Super Bright Yellow 20
pF V
F=0V;f=1MHz
V
F [2]
Forward Voltage
(DP)
Super Bright Yellow
4.0
(2.0)
5.0
(2.5)
V I
F=20mA
I
R
Reverse Current
(Per chip)
Super Bright Yellow
10 uA V
R=5V
Parameter Super Bright Yellow Units
Power dissipation
(Per chip)
75 mW
DC Forward Current (DP)
30
(30)
mA
Peak Forward Current [1] (DP)
175
(175)
mA
Reverse Voltage
(Per chip)
5
(5)
V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds
