©2002 Fairchild Semiconductor Corporation Rev. B, September 2002
KSC3073
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 3 A
I
B
Base Current 0.6 A
P
C
Collector Dissipation (T
a
=25°C) 1 W
Collector Dissipation (T
C
=25°C) 15 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0 30 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 1mA, I
C
= 0 5 V
I
CBO
Collector Cut-off Current V
CB
= 20V, I
E
= 0 1 µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 µA
h
FE1
h
FE2
DC Current Gain V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 2.5A
70
25
240
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 0.2A 0.3 0.8 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 2V,I
C
= 0.5A 0.75 1 V
f
T
Current Gain Bandwidth Product V
CE
= 2V, I
C
= 0.5A 100 MHz
C
ob
Output Capacitance V
CB
= 10V, f =1MHz 35 pF
Classification O Y
h
FE1
70 ~ 140 120 ~ 240
KSC3073
Power Amplifier Application
• Complement to KSA1243
1. Base 2. Collector 3. Emitter
I-PAK
1