KSC3073OTU

©2002 Fairchild Semiconductor Corporation Rev. B, September 2002
KSC3073
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 3 A
I
B
Base Current 0.6 A
P
C
Collector Dissipation (T
a
=25°C) 1 W
Collector Dissipation (T
C
=25°C) 15 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0 30 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 1mA, I
C
= 0 5 V
I
CBO
Collector Cut-off Current V
CB
= 20V, I
E
= 0 1 µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 µA
h
FE1
h
FE2
DC Current Gain V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 2.5A
70
25
240
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 0.2A 0.3 0.8 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 2V,I
C
= 0.5A 0.75 1 V
f
T
Current Gain Bandwidth Product V
CE
= 2V, I
C
= 0.5A 100 MHz
C
ob
Output Capacitance V
CB
= 10V, f =1MHz 35 pF
Classification O Y
h
FE1
70 ~ 140 120 ~ 240
KSC3073
Power Amplifier Application
Complement to KSA1243
1. Base 2. Collector 3. Emitter
I-PAK
1
©2002 Fairchild Semiconductor Corporation
KSC3073
Rev. B, September 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter on Voltage
Figure 5. Safe Operating Area Figure 6. Power Derating
0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
B
= 20mA
I
B
= 30mA
I
B
= 40mA
I
B
= 15mA
I
B
= 10mA
I
B
= 5mA
I
B
= 3mA
I
B
= 0
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1E-3 0.01 0.1 1 10
1
10
100
1000
V
CE
= 2V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.01
0.1
1
10
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1 1 10 100
0.01
0.1
1
10
V
CEO
MAX.
1ms
10ms
DC
I
C
MAX. (Pulse)
I
C
MAX. (DC)
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
3
6
9
12
15
18
21
24
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE
6.60
±0.20
0.76
±0.10
MAX0.96
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.60
±0.20
0.80
±0.10
1.80
±0.20
9.30
±0.30
16.10
±0.30
6.10
±0.20
0.70
±0.20
5.34
±0.20
0.50
±0.10
0.50
±0.10
2.30
±0.20
(0.50) (0.50)(4.34)
I-PAK
Package Dimensions
KSC3073
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, September 2002

KSC3073OTU

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Epitaxial Sil
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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